HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: T. Hallberg

• Annealing of Electron Irradiated P-, As-, Sb- and Bi-Doped Czochralski Silicon
  Published in: Defects in Semiconductors 17 (p1239)
• Carbon-Oxygen-Related Complexes in Irradiated and Heat-Treated Silicon: IR Absorption Studies
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p57)
• Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C
  Published in: Defects in Semiconductors 19 (p367)
• Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C
  Published in: Defects in Semiconductors 19 (p385)
• New Infrared Vibrational Bands Related to Interstitial and Substitutional Oxygen in Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p309)
• Oxygen and Carbon Clustering in Cz-Si during Electron Irradiation at Elevated Temperatures
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p297)
• The Oxygen Dimer in Silicon: Some Experimental Observations
  Published in: Defects in Semiconductors 19 (p361)