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Articles by author: T. Kormàny

• Formation of SiO_X Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy
  Published in: Defects in Semiconductors 15 (p195)
• Influence of Preannealing on Oxygen Precipitation
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p173)
• Oxygen Precipitation in Silicon: Correlation of the Experimental Results Obtained with IR Spectroscopy, Preferential Etching and X-Ray Topography
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p119)
• Precipitation Phenomena in CMOS Technology
  Published in: Defects in Semiconductors 15 (p189)
• Study of the Defect Depth Distribution in Heat Treated Si Wafers by X-Ray Topography
  Published in: Defects in Semiconductors 15 (p1313)