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Articles by author: U.M. Gösele

• An Analysis of Point Defect Fluxes during SiO₂ Precipitation in Silicon
  Published in: Defects in Semiconductors 16 (p1451)
• Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide
  Published in: Beam Injection Assessment of Defects in Semiconductors (p183)
• Contamination and Cleaning of GaAs-(100) Surfaces
  Published in: Defects in Semiconductors 18 (p1967)
• Diffusion in GaAs and Related Compounds: Recent Developments
  Published in: Diffusion in Materials DIMAT 1996 (p1079)
• Diffusion in Semiconductors - Unsolved Problems
  Published in: Diffusion in Solids - Unsolved Problems (p189)
• Fermi Level Effect and Vacancy Contribution to the Outdiffusion of Si in GaAs
  Published in: Shallow Impurities in Semiconductors V (p399)
• Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p219)
• History and Future of Semiconductor Wafer Bonding
  Published in: Gettering and Defect Engineering in Semiconductor Technology VI (p33)
• Incorporation, Diffusion and Agglomeration of Carbon in Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p189)
• Interdiffusion in GaAs/GaAsP and GaAs/GaAsSb Superlattices
  Published in: Diffusion in Materials DIMAT 1996 (p1101)
• Interface Defects of Bonded Silicon Wafers
  Published in: Defects in Semiconductors 18 (p1847)
• Investigations of Extended Defects after Sulfur Diffusion in GaAs
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p443)
• Light-Emitting Porous Silicon: A Defective Quantum Sponge Structure?
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p27)
• Non-Equilibrium Point Defects and Diffusion in GaAs and Related Compounds
  Published in: Shallow Impurities in Semiconductors V (p53)
• Point Defects and Diffusion in Silicon and Gallium Arsenide
  Published in: Diffusion Processes in High Technology Materials (p1)