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Papers by Author: U.M. Gösele

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Authors: Manfred Reiche, O. Moutanabbir, Jan Hoentschel, U.M. Gösele, Stefan Flachowsky, Manfred Horstmann

Abstract: Strained silicon channels are one of the most important Technology Boosters for further Si CMOS developments. The mobility enhancement obtained by applying appropriate strain provides higher carrier velocity in MOS channels, resulting in higher current drive under a fixed supply voltage and gate oxide thickness. The physical mechanism of mobility enhancement, methods of strain generation and their application for advanced VLSI devices is reviewed.

Size-Controlled Si Nanocrystals for Photonic and Electronic Applications

Authors: M. Zacharias, L.X. Yi, J. Heitmann, R. Scholz, Manfred Reiche, U.M. Gösele

Incorporation, Diffusion and Agglomeration of Carbon in Silicon

Authors: P. Lavéant, P. Werner, G. Gerth, U.M. Gösele

189

Investigations of Extended Defects after Sulfur Diffusion in GaAs

Authors: N. Engler, H.S. Leipner, R.F. Scholz, P. Werner, F. Syrowatka, Jürgen Schreiber, U.M. Gösele

443

Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide

Authors: R.F. Scholz, U.M. Gösele, Otwin Breitenstein, U. Egger, T.Y. Tan

183

Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon