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Articles by author: V.V. Shumov

• Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
  Published in: Defects in Semiconductors 19 (p1767)
• Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p183)
• EPR and IR Absorption of Defects in Isotopically Enriched Germanium
  Published in: Defects in Semiconductors 18 (p167)
• Reactions between Point Defects in Silicon Doped with Germanium
  Published in: Defects in Semiconductors 18 (p1381)
• The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
  Published in: Defects in Semiconductors 19 (p1773)