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Articles by author: W. Walukiewicz

• Carrier Localization in Gallium Nitride
  Published in: Defects in Semiconductors 18 (p31)
• Defect Formation and Electronic Transport at AlGaN/GaN Interfaces
  Published in: Defects in Semiconductors 19 (p1749)
• Diffusion, Interface Mixing and Schottky Barrier Formation
  Published in: Defects in Semiconductors 17 (p519)
• Electric Field Broadening of Gallium Acceptor States in Compensated Ge: Ga, As
  Published in: Defects in Semiconductors 18 (p127)
• Electrical Activity and Diffusion of Shallow Acceptors in III-V Semiconductors
  Published in: Defects in Semiconductors 16 (p941)
• Implantation of Carbon in GaAs and Compensating Native Defects
  Published in: Defects in Semiconductors 17 (p1535)
• Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As
  Published in: Defects in Semiconductors 19 (p77)
• Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface
  Published in: Defects in Semiconductors 15 (p1427)
• Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures
  Published in: Defects in Semiconductors 19 (p813)
• Properties of Resonant Localized Donor Level in Low-Temperature-Grown InP
  Published in: Defects in Semiconductors 17 (p1081)
• Resonant Interaction Between Local Vibrational Modes and Extended Lattice Phonons in AlSb
  Published in: Defects in Semiconductors 19 (p1247)
• Surface Recombination in Semiconductors
  Published in: Defects in Semiconductors 18 (p1389)
• Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1449)
• Vibrational Mode Fourier Transform Spectroscopy with a Diamond Anvil Cell: Modes of the Si DX Center and S Related Centers in GaAs
  Published in: Defects in Semiconductors 16 (p757)