HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Wilfried Lerch

• An Overview of ms Annealing for Deep Sub-Micron Activation
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p257)
• Defect Injection and Diffusion in Semiconductors
  Published in: Reactive Phase Formation at Interfaces and Diffusion Processes (p475)
• Diffusion and Activation of Ultra Shallow Boron Implants in Silicon in Proximity of Voids
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p357)
• Extended Defects Evolution in Pre-Amorphised Silicon after Millisecond Flash Anneals
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p269)
• Fast Diffusion in Germanium and Silicon Investigated by Lamp-Based Rapid Thermal Annealing
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p35)
• Impact of Hydrogen on Oxygen Precipitation and Gate Oxide Integrity after RTA Processing
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p127)
• Implant Annealing – An Evolution from Soak over Spike to Millisecond Annealing
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p207)
• Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p153)
• Modeling and Simulation of Advanced Annealing Processes
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p279)
• Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p277)
• Process-Induced Diffusion Phenomena in Advanced CMOS Technologies
  Published in: Diffusion in Solids and Liquids (p510)
• Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping
  Published in: Rapid Thermal Processing and beyond: Applications in Semiconductor Processing (p295)