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Articles by author: Wolfgang Skorupa

• A Computational Model for the Formation of (SiC)_1-x(AIN)_x Structures by Hot, High-Dose N⁺ and Al⁺ Co-Implants in 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p757)
• A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)
  Published in: Silicon Carbide and Related Materials 2004 (p217)
• Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p741)
• Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge⁺ Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p607)
• Buckling Stabilization and Stress Reduction in SiC on Si by i-FLASiC Processing
  Published in: Silicon Carbide and Related Materials 2007 (p239)
• Defect Engineering and Prevention of Impurity Gettering at R_P/2 in Ion-Implanted Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p399)
• Defect Engineering for SIMOX Processing
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p339)
• Defect Engineering in Ion Beam Synthesis of SiC and SiO₂ in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p321)
• Defect Engineering in SOI-Structures Formed by High Dose Implantation of Reactive Ions
  Published in: Gettering and Defect Engineering in Semiconductor Technology (p565)
• Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
  Published in: Silicon Carbide and Related Materials 2005 (p1563)
• Epitaxial Growth of β-SiC on Ion-Beam Synthesized β-SiC: Structural Characterization
  Published in: Silicon Carbide and Related Materials - 1999 (p309)
• Epitaxial SiC Formation at the SiO₂/Si Interface by C⁺ Implantation into SiO₂ and Subsequent Annealing
  Published in: Silicon Carbide and Related Materials 2004 (p233)
• Flash Lamp Annealing of Implantation Doped p- and n-Type 6H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p587)
• Flash Lamp Supported Deposition of 3C-SiC (FLASiC) – a Promising Technique to Produce High Quality Cubic SiC Layers
  Published in: Silicon Carbide and Related Materials 2003 (p175)
• Formation of 3C-SiC Films Embedded in SiO₂ by Sacrificial Oxidation
  Published in: Silicon Carbide and Related Materials 2003 (p1515)