HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by author: Yi Chen

• Aspects of Dislocation Behavior in SiC
  Published in: Silicon Carbide and Related Materials 2007 (p261)
• Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2006 (p231)
• Characterization of Dislocations and Micropipes in 4H n⁺ SiC Substrates
  Published in: Silicon Carbide and Related Materials 2007 (p333)
• Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals
  Published in: Silicon Carbide and Related Materials 2005 (p67)
• High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
  Published in: Silicon Carbide and Related Materials 2007 (p305)
• Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-Ray Topography
  Published in: Silicon Carbide and Related Materials 2007 (p549)
• Micropipe Dissociation through Thick n⁺ Buffer Layer Growth
  Published in: Silicon Carbide and Related Materials 2007 (p167)
• Sense Determination of c-Axis Screw Dislocations in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2007 (p297)
• Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
  Published in: Silicon Carbide and Related Materials 2007 (p301)
• Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers
  Published in: Silicon Carbide and Related Materials 2007 (p357)
• The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality
  Published in: Silicon Carbide and Related Materials 2008 (p109)