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Articles by author: Yu.V. Pomozov

• Diffusion and Precipitation of Oxygen in Silicon Doped with Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p183)
• Influence Intrinsic Elastic Stresses on the Annealing Processes of Radiation Defects in Silicon
  Published in: Defects in Semiconductors I (p293)
• Interstitial Carbon Related Defects in Low-Temperature Irradiated Si: FTIR and DLTS Studies
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p261)
• Interstitial Carbon-Related Defects in Si_1-xGe_x Alloys
  Published in: Gettering and Defect Engineering in Semiconductor Technology XII (p59)
• Interstitial-Related Radiation Defects in Silicon Doped with Tin and Germanium
  Published in: Gettering and Defect Engineering in Semiconductor Technology X (p393)
• Local Vibrations of Substitutional Carbon in SiGe Alloys
  Published in: Advanced Materials Forum III (p364)
• On the Properties of Divacancies in Si_1-xGe_x
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p545)
• Oxygen and Peculiarities of its Precipitation in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p215)
• Oxygen Diffusion in Si_1-xGe_x Alloys
  Published in: Gettering and Defect Engineering in Semiconductor Technology XIII (p181)
• Oxygen Precipitation in Silicon Doped with Tin
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p111)
• Peculiarities of Thermal Donors Generation and Oxygen Precipitation at 650°C with Silicon Irradiated by Neutrons
  Published in: Defects in Semiconductors I (p537)
• Radiation Defects Formation in Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p209)
• The Influence of Isovalent Doping on Diffusion of Interstitial Oxygen in Silicon
  Published in: Defects in Semiconductors 19 (p1773)