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Articles by author: Z.G. Herro

• [01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
  Published in: Silicon Carbide and Related Materials 2004 (p307)
• Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p55)
• Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability
  Published in: Silicon Carbide and Related Materials 2004 (p283)
• Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p95)
• Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
  Published in: Silicon Carbide and Related Materials - 2002 (p67)
• Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
  Published in: Silicon Carbide and Related Materials - 2002 (p337)
• Flux Growth of SiC Crystals from Eutectic Melt SiC-B₄C
  Published in: Silicon Carbide and Related Materials 2003 (p119)
• Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p333)
• 'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging
  Published in: Silicon Carbide and Related Materials 2001 (p91)
• Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, ¹³C Labeling of Source Material and Numerical Modeling
  Published in: Silicon Carbide and Related Materials - 2002 (p9)
• Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2003 (p111)
• Silicon Carbide Buffer Layers for Nitride Growth on Si
  Published in: Silicon Carbide and Related Materials 2001 (p1485)
• Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
  Published in: Silicon Carbide and Related Materials 2003 (p719)