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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
more...
Articles by author: Z.G. Herro
13 papers on 1 page:
1
[01-15] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray Diffraction
Published in:
Silicon Carbide and Related Materials 2004
(p307)
Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide
Published in:
Silicon Carbide and Related Materials 2003
(p55)
Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability
Published in:
Silicon Carbide and Related Materials 2004
(p283)
Effect of Thermal Field on Interface Step Structures during PVT Growth of (0001)Si 6H-SiC
Published in:
Silicon Carbide and Related Materials 2003
(p95)
Effective Increase of Single-Crystalline Yield during PVT Growth of SiC by Tailoring of Radial Temperature Gradient
Published in:
Silicon Carbide and Related Materials - 2002
(p67)
Electrical and Optical Characterization of p-Type Boron-Doped 6H-SiC Bulk Crystals
Published in:
Silicon Carbide and Related Materials - 2002
(p337)
Flux Growth of SiC Crystals from Eutectic Melt SiC-B
4
C
Published in:
Silicon Carbide and Related Materials 2003
(p119)
Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
Published in:
Silicon Carbide and Related Materials - 2002
(p333)
'Insitu Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray Imaging
Published in:
Silicon Carbide and Related Materials 2001
(p91)
Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging,
13
C Labeling of Source Material and Numerical Modeling
Published in:
Silicon Carbide and Related Materials - 2002
(p9)
Natural Crystal Habit and Preferential Growth Directions during PVT of Silicon Carbide
Published in:
Silicon Carbide and Related Materials 2003
(p111)
Silicon Carbide Buffer Layers for Nitride Growth on Si
Published in:
Silicon Carbide and Related Materials 2001
(p1485)
Uniform Axial Charge Carrier Concentration in PVT-Grown p-Type 6H SiC by Non-Uniform Distribution of Boron in the Powder Source
Published in:
Silicon Carbide and Related Materials 2003
(p719)
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