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Articles by author: Z. Zolnai

• Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p473)
• Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide
  Published in: Silicon Carbide and Related Materials - 2002 (p645)
• Defects in High-Purity Semi-Insulating SiC
  Published in: Silicon Carbide and Related Materials 2003 (p437)
• Defects in Semi-Insulating SiC Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p45)
• Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
  Published in: Silicon Carbide and Related Materials 2004 (p637)
• Ion Bombardment Induced Damage in Silicon Carbide Studied by Ion Beam Analytical Methods
  Published in: Silicon Carbide and Related Materials 2000 (p271)