Papers by Keyword: Acceptor

Abstract: Influence of acceptor incomplete ionization in p⁺ emitter on characteristics of SiC LTT with n-type blocking base was investigated in this work through TCAD simulation. The incomplete ionization model in the p⁺ emitter was shielded for comparison of the influence of acceptor complete ionization status. The minimum triggering intensity, forward on-state voltage drop, turn-on delay time and anode voltage falling time were simulated and discussed. The simulation results indicated that the acceptor incomplete ionization in p⁺ emitter makes the minimum triggering intensity, forward on-state voltage drop, switch-on delay time and anode voltage falling time increase by about 3.0 times, 1.24 times, 22% and 2.55 times, respectively.

Abstract: The effect of rare earth (Ln = Gd, Dy, Y and Yb) and Mg ions on the microstructure and reliability of BaTiO3-based monolithic ceramic capacitors (MLCs) with Ni electrodes was investigated. The X-ray diffraction results about the lattice volume of sintered specimens suggested that Gd and Dy ions predominatly substituted into the Ba-site, Yb ions gave exclusive substitution at the Ti-site, while Y ions occupied either the Ba- and Ti-site. The reliability of ceramic capacitors was increasing with increasing the ionic radius of the rare earths in this study. The nonlinearity coefficient() etsimated from the leakage currents and the lifetime measured from the highly accelerated lifetime testing (HALT) showed a negative correlation which was observed only from Dy and Y ions doped specimens. The quantity of Ln and Mg in the grains tended to increase with increasing the Ln ionic radius. In order to improve the reliability and the insulation property of BaTiO3 based MLCs with Ni electrodes, it is important that acceptor ions at the Ti-site compensate donor ions which are rare earth ions at the Ba-site, so the overall quantity of the dopants required for the charge compensation with acceptor and donor ions increases accordingly.

Abstract: Diffusion behaviors of aluminum (Al) in zinc-oxide (ZnO) single crystals were measured by means of ion implantation technique and SIMS depth profiling. It was found that Al concentration profile had a peculiar shape with a constant-concentration region and a steep tail, which was also found in profiles of other donors such as Ga and In. Detailed analysis of the profiles revealed that the diffusivity of Al was proportional to the square of Al concentration and its intrinsic diffusivity was much smaller than previously reported values. Oxygen diffusion experiments were also performed and the implantation of Al ions enhanced the oxygen diffusion coefficients by about 20 times. This result indicates that oxygen interstitial diffusion occurs in n-type ZnO.

Abstract: From the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer irradiated with several fluences of 200 keV electrons, the density of Al acceptors with 0.2 V E + eV decreases significantly with increasing fluence, whereas the density of unknown defects with 0.37 V E + eV increases with fluence and then decreases slightly. Although only C vacancies increase with fluence because 200 keV electrons can displace only C atoms, only the increase in the density of C monovacancies cannot explain the changes of p(T) by 200 keV electron irradiation. It may be necessary to consider the relationship between C vacancies and Al acceptors.

Abstract: We have investigated the hydrogenation of the zinc acceptor in GaP and InP, and of the phosphorus acceptor in ZnTe, by computer modeling. We used a density-functional supercell code and pseudopotentials to deal with the core electrons. However zinc 3d electrons were explicitly taken to be valence electrons. We have determined the relaxed atomic geometry for seven hydrogen sites. We have found that, in the lowest total energy configuration, hydrogen sits in a bond centered position between zinc and arsenic atoms in all GaP, InP and ZnTe semiconductors and is bonded to the phosphorus atom. We found metastable states, by 0.4, 0.4 and 0.5 eV, for structures where H is antibonding to the phosphorus atom for GaP, InP and ZnTe, respectively. The calculated local vibrational modes (LVM) for the bond-centered configuration agree, within 1%, with the experimental values of 2379.0 cm-1 for GaP:Zn-H, 2287.7 cm-1 for InP:Zn-H and 2193 cm-1 for ZnTe:P-H. The isotopic shift due to the replacement of deuterium by hydrogen is reproduced by less than 2.5% using experimental data. The decrease in the LVM when going from GaP to ZnTe, as the perfect bond length increases, is also well-reproduced. A wag mode at 496 cm-1 and lower LVM, a doublet at 329 cm-1 and a singlet at 242 cm-1, are predicted for P-H in ZnTe.

Abstract: SnO2 ceramics were co-doped with the aliovalent ions of CoO and Nb2O5 and the grain growth behavior of the SnO2 was investigated. When only CoO was doped, the grain growth exponent of SnO2 was 3. As the amount of Nb2O5 increased, the exponent changed from 3 to 2 when 0.505 mol% of Nb2O5 was added. The further addition of Nb2O5 changed the exponent from 2 to 3. When Nb2O5 content was 0.505 mol%, of which the grain growth exponent was 2, it is believed that an iso-electric point is formed without grain boundary segregation, since the respective space charges, generated by Nb5+ and Co3+ might compensate each other.