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Papers by Keyword: Amorphous Silicon Carbide

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Role of Amorphous Silicon Carbide in Microstructure and Mechanical Properties of nc-TiC/a-SiC Nanocomposite Coatings Prepared by PECVD

Authors: Jung Tae Ok, Chung Yun Kang, Seong Soo Park, Pung Keun Song, Kwang Ho Kim

2271

Molecular Dynamics Analysis of Structure and Intrinsic Stress in Amorphous Silicon Carbide Film with Deposition Process Parameters

Authors: Ju Young Kim, Baik Woo Lee, Ho Seok Nam, Dong Il Kwon

Abstract: Amorphous silicon carbide (a-SiC) films were deposited using molecular dynamics simulations employing the Tersoff potential. The structure and intrinsic stress of a-SiC films changed dramatically with changes in such principal deposition process parameters as substrate temperature and incident energy. Changes in structure and intrinsic stress with deposition process parameters were analyzed.

Crystallization Kinetics of Polysilane Derived SiC

Authors: Eberhard Müller, Dirk Kurtenbach, Gerhard Roewer, Erica Brendler, Brian S. Mitchell

Effects of Pulsed Electron Beam Annealing on Radiation Damage in N Doped a-SiC:H Films Deposited by PECVD

Authors: J. Huran, I. Hotový, J. Staňo, A.P. Kobzev, N.I. Balalykin

529

Thin Films of α-Si_1-xC_x:H Deposited by PECVD: The r.f. Power and H₂ Dilution Role

Authors: R.J. Prado, M.C.A. Fantini, M.H. Tabacniks, I. Pereyra, A.M. Flank

329

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Authors: Yi Hua Wang, Jian Yi Lin, Zhe Chuan Feng, Soo Jin Chua, Cheng Hon Huan Alfred

325