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Articles by keyword: «CZ-Si»

• Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p615)
• Effect of Stress Induced Defects on Electrical Properties of Czochralski Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p393)
• Hydrogen Gettering within Processed Oxygen-Implanted Silicon
  Published in: Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices (p35)
• Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p169)
• Influence of Size and Density of Oxygen Precipitates of Internal Gettering Efficiency of Iron in Czochralski-Grown Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology VII (p75)
• Progress in Study of Oxygen-Related Defects in Electron Irradiated CZ-Si
  Published in: Advance in Ecological Environment Functional Materials and Ion Industry III (p115)
• Stress - Dependent Out - Annealing of Defects in Self - Implanted Silicon
  Published in: Gettering and Defect Engineering in Semiconductor Technology XI (p351)
• Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process
  Published in: Defects in Semiconductors 18 (p1835)
• Study of Oxygen Atom Clustering in Si Induced by External Stress by Means of a Monoenergetic Positron Beam
  Published in: Positron Annihilation - ICPA-9 (p1467)
• Substrate Material for sub-0.25µm Si Technology Comparison of Hydrogen Annealed Wafers and Challengers: Evidence for Dopant Enhanced Diffusion
  Published in: Gettering and Defect Engineering in Semiconductor Technology VIII (p577)