Authors: Guillaume Da Rold, Cédric Guyon, Siméon Cavadias, Jacques Amouroux
Abstract: During the atmospheric re-entry phase, the thermal protection of a spacecraft vehicle is submitted to air plasma. The transfer of the kinetic energy of the gases to the surface leads to an important heating of the nose cap and leading edges. The energy released from the recombination of oxygen atoms on the surface produces an additional amount of heat, increasing further the temperature. This excess of heat can damage the protection materials. This last mechanism leads to the oxidation of the surface and an accelerated ageing of the material. The oxidation produces a new surface layer of oxide such as SiO2 (Passive oxidation) and leads to the ablation of the material by the formation of CO, CO2, SiO and to the diffusion of oxygen in the bulk creating micro-cracks in the material (Active oxidation). Thus the composition of the surface and consequently the protection material properties are modified. The atmospheric re-entry conditions are created with a non equilibrium low pressure RF plasma chemical reactor. The ageing of the material and the diffusion of oxygen are studied by mass spectrometry analysis of 18O isotope for temperatures ranging from 300 – 1000 K. Silicon Carbide targets are covered with two different coatings, Chromium oxide, and Chromium oxide/ Silica. Oxygen diffusion in the material bulk for the targets was followed by Secondary Ion Mass Spectroscopy (SIMS).Mass Spectrometry shows the formation of CO and CO2 pointing out the process of ablation. This ablation is much lower in the case of polluted sample (with Chromium oxide). SIMS analyses show that Cr2O3 acts like a barrier in the oxidation of the material by limiting the diffusion of oxygen in the bulk.
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Authors: Norimitsu Murayama, Noriya Izu, Woosuck Shin, Ichiro Matsubara
Abstract: For resistive oxygen sensor elements of Ce1-xZrxO2 (x = 0.0, 0.05, 0.1, 0.2), grain diameter was varied in the range of 86 – 300 nm by changing sintering temperature or changing Zr content. The grain diameter decreased with increasing Zr content. The response time was approximately proportional to the square of the grain diameter. In the relationship between the amplitude of sensor output, An and the frequency, f of sine wave of variation in oxygen partial pressure, the gradient in the high-frequency region of a plot of log An vs. log f in was approximately –0.5. From these results, it was concluded that the sensor response was determined by the oxygen vacancy diffusion rate. The grain diameter of Ce0.8Zr0.2O2 element was 86 nm and the response time at 1073 K was 9 ms, which result opens the door to the technological development of independent control of engine cylinders.
323
Authors: Kenji Matsumoto, Yutaka Adachi, Takeshi Ohgaki, Isao Sakaguchi, Tsubasa Nakagawa, Naoki Ohashi, Hajime Haneda
Abstract: Zinc isotopic heterostructured zinc oxide thin films of 64ZnO/68ZnO/64ZnO were synthesized using pulsed laser deposition. The pulsed laser was first irradiated onto a polycrystalline target of 64ZnO to deposit the 64ZnO layer, then onto the 68ZnO target to prepare the 68ZnO layer and finally, the 64ZnO target was used again. The 64ZnO/68ZnO/64ZnO layered thin film was thus obtained. The thin films were annealed at various diffusion annealing temperatures. Diffusion profiles of the zinc isotopes due to the annealing were evaluated using secondary ion mass spectrometry (SIMS). The diffusion coefficients were slightly higher near the interface between the thin film and the substrate (the inner region) compared to the near surface (the outer region).
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Authors: Mohammad Ebrahim Zeynali
Abstract: The dehydrogenation of diethylbenzene to divinylbenzene is a catalytic reaction. The catalyst for the dehydrogenation was prepared by co-precipitation of iron and chromium hydroxide from nitrate solution, followed by doping with potassium carbonate and drying. To make available the internal surface area of the catalyst for the reactant, the pores must be of the proper sizes to allow the reactant to diffuse and penetrate inside the catalyst pellets. The prepared catalyst was considered as a model for investigating the role of diffusion in catalyst design.
In this study, different mechanisms of diffusion, such as Knudsen and bulk, were investigated for the case of diethylbenzene diffusion into the catalyst and it was concluded that the pore sizes should be in a range that permits transitional diffusion (both Knudsen and bulk diffusion). The catalyst grain size can be controlled and varied by acting on parameters such as the speed and time of mixing, type of alkali, temperature and pH. Particle size distribution experiments were conducted for different types of alkali and speeds of mixing in order to characterize the catalyst. The effects of the grain size, formed during co-precipitation, upon the pore size distribution of the catalyst pellet which affects the effective diffusivity were discussed. The pore size distribution of the model catalyst was obtained and the effective diffusivities were calculated by numerical integration of the Johanson-Stewart equation.
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Authors: Reinhard Kögler, Christiane Dubois, Jürgen W. Gerlach, H. Hutter, A. Mücklich, Wolfgang Skorupa
Abstract: Implantation of 18O into highly B-doped and undoped silicon provides the
possibility to investigate the effect of B-doping and to distinguish the processes of in-diffusion and
out-diffusion of oxygen by profiling of 16O and 18O, respectively. The simultaneous in- and outdiffusion
of oxygen was observed at 1000°C under oxidizing conditions. For silicon, heavily Bdoped
to concentrations of 1019 B cm-3, oxygen tends to diffuse out toward the surface.
Moreover, a fraction of the oxygen from both sources, implanted 18O and in-diffused 16O, also
migrates deep into the substrate and is trapped far beyond the mean ion range RP in the depth of
x
3RP at the so-called trans-RP gettering peak.
In undoped silicon oxygen accumulation only takes place at vacancy-type defects introduced by ion
implantation at a position shallower than RP.
The mobility of oxygen implanted into B-doped Si is higher than for implantation into undoped Si.
Highly mobile defects are suggested to be formed in B-doped silicon beside the common mobile
interstitial oxygen, Oi, and the immobile SiOX precipitates. These I OXBY defects may involve selfinterstitials,
I, and O and B atoms. The trans-RP peak appears due to the decay of these defects and
the segregation of their constituents.
375
Authors: Vladimir V. Voronkov, Robert J. Falster, Semih Senkader
Abstract: Out-diffusion nitrogen profiles measured by SIMS after annealing at 850 and 800oC, have a peculiar minimum at a depth of about 5 m. The profiles are well reproduced by simulations assuming that there is a considerable fraction of nitrogen stored in substitutional clusters VN4. Upon annealing, these clusters lose nitrogen and convert into a stable high-temperature form VN1. This reaction involves a preliminary attachment of a fast-diffusing interstitial trimer, N3. Accordingly, the conversion occurs only in the bulk but not at the surface (due to out-diffusion loss of N3), and the substitutional component decreases from the surface towards the bulk. By fitting the profiles, the two basic parameters of the N2/N1 transport are deduced: P = D1K1/2 (a combination of the monomeric diffusivity D1 and the dissociation constant of dimers, K), and the dissociation time of dimers. With these data, D1(T) and K(T) are specified.
149
Authors: Vladimir V. Voronkov, G.I. Voronkova, A.V. Batunina, V.N. Golovina, Robert J. Falster, M. Cornara, N.B. Tiurina, A.S. Guliaeva
Abstract: The generation of Thermal Donors in Si is a nucleation process controlled by several mobile On clusters. The rate-limiting transitions are found to be O1 O2 and O4 O5. The individual transition rates G12 and G45, and also G23 and G34 are deduced from the experimental data. From the transient variation of the generation rate G(t), the equilibrium concentration of the dimers is found, and with it the dimeric diffusivity is also defined. In samples pre-treated at high T, the G(t) dependence has a maximum, due to quenched-in fast-diffusing oxygen monomers (FDMs). The concentration and diffusivity of FDMs were determined.
115
Authors: Alvaro Garcia, Erik Schlangen, Martin Van de Ven
Abstract: It is well known that asphalt concrete is a self healing material: immediately after both faces of a crack are in contact, the diffusion of molecules from one face to the other starts. If there are no more loads, this process takes place until the crack has completely disappeared and the material has recovered its original resistance [1]. To increase this healing rate two methods are proposed. The first one is a passive self-healing mechanism. Embedded encapsulated chemicals are used in the binder. When microcracks start appearing in the binder due to the combination of ageing and accumulated damage, they break the capsules and the chemicals enter the binder by diffusion. These chemicals repair the material, decreasing the stiffness and increasing the healing rates of bitumen. The second approach makes use of an active self healing mechanism. Local heating inside the material is used to repair the binder and to improve the properties again. This is realized by adding conductive particles to the binder and using induction energy to increase the temperature. These methods are a fairly new concept in the asphalt industry.
573
Authors: F.Y. Meng, S.M. Nie
Abstract: Many cracks can occur in heavy forging as a result of inherent defects of heavy ingot and forging process. According to the results of current research, internal crack of metallic material can heal under high temperature. In order to get to the bottom of internal crack healing in heavy forgings, some 45 steel samples containing internal crack were normalized at higher temperature than normal. The phenomena show that new ferrite grains nucleate and grow up on the crack surfaces during the crack healing, and the ferrite grains nucleation is universal but selective on crack surfaces. The relationship of atom diffusion and ferrite grain nucleation and their actions on crack surface migration will be discussed and expounded, and that proves that ferrite grain nucleation and growth will accelerate crack healing.
547
Authors: Gideon Moses Jacob, Igor Zhitomirsky
Abstract: Nanostructured manganese dioxide films were obtained by electrosynthesis using 0.02-0.15 M KMnO4 solutions. The diffusion-controlled deposition mechanism is based on the reduction of anionic MnO4- at the cathode surface. The method allowed the fabrication of porous films for application in electrochemical supercapacitors (ES). It was shown that film porosity is beneficial for the charge transfer during deposition, crack prevention in thick films and electrolyte diffusion in fabricated ES electrodes. Porous nanostructured films showed good capacitive behavior in the 0.1 M Na2SO4 electrolyte in a voltage window of 1V. The specific capacitance decreased with increasing scan rate due to the diffusion limitation in the porous manganese dioxide electrodes
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