Papers by Keyword: ECR

Abstract: Diamond-like carbon films (DLC) were deposited on single crystalline silicon surface under different RF negative bias in microwave electron cyclotron resonance (ECR) plasma source. The chemical structure and morphology were characterized by Fourier transformation infrared spectroscopy (FTIR) and atomic force microscopy (AFM). The friction coefficient of films was measured to examine the film property later. The results show that the smooth and compact deposited films were typical hydrogenated diamond-like carbon with CHn stretching vibration in 2800-3000cm^-1. It is noticed that with the increase of RF bias on the substrate the peak intensity for C-H stretching vibration in spectrum between 2800cm^-1~3000cm^-1 increased at the beginning and then decreased, which caused the friction coefficient of the film being smaller and then larger in reverse. In 50W RF biased power one can obtain the maximum-CHn peak intensity and the minimum friction coefficient.

Abstract: In order to improve the channel elecron mobility and decrease the surface roughness of SiC ,we have cleaned the SiC surfacre by hydrogen plasma with ECR–PEMOCVD plasma system. The surfaces were investigated by RHEED and X-ray Photoelectron Spectroscopy before and after hydrogen plasma cleanging. It indicated that the Si oxide content of SiC surface cleaned by hydrogen plasma for 18minutes is significantly higher than for 12 minutes and the SiC surface cleaned for 12 minutes at 200°C with ECR–PEMOCVD plasma system is the most smooth. The hydrogen plasma cleaning technology is very useful to improve the channel elecron mobility of MOS device.

Abstract: Cu/C:H films were prepared on the PET (polyethylene terephthalate) substrate under room temperature by ECR (electron-cyclotron-resonance) chemical vapor deposition coupled with a (-)DC bias system. Hydrogen contents in the plasma strongly affected the crystallographic structures, sheet resistivity, and the composition of deposited films. Cu (111) peaks by XRD analysis were clearly observed with the increase of hydrogen contents. The surface morphology also indicated that copper grains of very fine crystallites were incorporated in the metal-organic composite films by the introduction of hydrogen gas to the plasma. Cu/C:H composite films exhibited a good adhesion force due to the generation of sp3-CH2 bonding. These observations imply that hydrogen induced the formation of stable volatile organic compounds and the reduction of copper, consequently leading to a significant alteration of the crystallographic structure and composition of deposited films. Finally, the EMI shielding efficiency was increased by the addition of hydrogen gas to the plasma, probably due to the increase of copper contents in the film.

Abstract: In this work we present results of Si/SiO2/SiON/SiO2 waveguides fabricated by means of ECR-PECVD. In order to change refraction index and simultaneously to reduce losses related with hydrogen, we have used N2 as precursor gas for controlling the nitrogen to oxygen relation present in the samples. The composition of the samples were carefully controlled by RBS and ERDA analysis. The refractive index and thickness were measured by using a prisma coupler method at a wavelength of 632.8 nm.