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Articles by keyword: «Energy Levels»

• Diffusion and Electrical Properties of Nickel in Silicon
  Published in: Defects and Diffusion in Semiconductors (p171)
• Dislocations in GaAs: Their Impact on Electronic and Atomic Processes
  Published in: Defects and Diffusion in Semiconductors (p27)
• Electronic Properties of Zn in Si_1-xGe_x Alloys: A Basis for Studying Zn Diffusion in SiGe
  Published in: Diffusion in Materials DIMAT 1996 (p1141)
• Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon
  Published in: Defects and Diffusion in Semiconductors (p25)
• Electron-Induced Damage Effects in 4H-SiC Schottky Diodes
  Published in: Silicon Carbide and Related Materials - 2002 (p439)
• Energy States of Deformation-Induced Dislocations in Silicon Crystals
  Published in: Defects in Semiconductors 18 (p1195)
• Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices
  Published in: Defects in Semiconductors 19 (p1625)
• Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds
  Published in: Defects in Semiconductors 17 (p721)
• Optical Study of Eu³⁺ Ion Embedded in (1-x)Na₂WO₄-xP₂O₅ Glasses Highlighting a Temperature Effect on its Local Environment
  Published in: Recent Developments in Advanced Materials and Processes (p447)
• Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon
  Published in: Gettering anf Defect Engineering in Semiconductor Technology IX (p657)
• Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
  Published in: Silicon Carbide and Related Materials 2004 (p519)
• VUV Spectroscopy of Lanthanides: Extending the Horizon
  Published in: Rare Earths '98 (p11)