| Paper Title | Page |
|---|---|
|
Diffusion and Electrical Properties of Nickel in Silicon Authors: S. Tanaka, Tetsuo Ikari, H. Kitagawa |
171 |
|
Dislocations in GaAs: Their Impact on Electronic and Atomic Processes Authors: T. Wosiński, T. Figielski |
27 |
|
Electronic Properties of Zn in Si1-xGex Alloys: A Basis for Studying Zn Diffusion in SiGe Authors: S. Voss, Hartmut Bracht, Nicolaas Stolwijk, Helmut Mehrer, Jürgen Wollweber |
1141 |
|
Electronic State, Atomic Configuration and Local Motion of Hydrogen around Carbon in Silicon Authors: Y. Kamiura, K. Fukuda, Y. Yamashita, T. Ishiyama |
25 |
|
Electron-Induced Damage Effects in 4H-SiC Schottky Diodes Authors: Antonio Castaldini, Anna Cavallini, Filippo Nava, P.G. Fuochi, P. Vanni |
439 |
|
Energy States of Deformation-Induced Dislocations in Silicon Crystals Authors: H. Kusanagi, Takashi Sekiguchi, Koji Sumino |
1195 |
|
Influence of Erbium Doping on Structure and Optical Properties of the InGaAs/GaAs Superlattices Authors: L.G. Gerchikov, V.F. Masterov, T.R. Stepanova, H.M. Gibbs, G. Khitrova, N.N. Faleev |
1625 |
|
Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds Authors: Jerzy M. Langer |
721 |
|
Authors: E. Antić-Fidančev, Bruno Viana, P. Aschehoug, L. Bih, A. Nadiri, M. Taibi, J. Aride |
447 |
|
Spectroscopic Characterisation of Erbium Impurity in Crystalline Silicon Authors: C.A.J. Ammerlaan, Ingrid de Maat-Gersdorf |
657 |