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CONFERENCE
6/16/2013 - 6/19/2013
The 7th International conference on Physical and Numerical Simulation of Materials Processing
5/16/2013 - 5/19/2013
2nd International Congress on Advanced Materials
4/13/2013 - 4/14/2013
2013 2nd lnternational Conference on lntclligent Materials, Applied Mechanics and Design Science (IMAMD 2013)
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Articles by keyword: «
Gate Dielectric
»
9 papers on 1 page:
1
Advanced Gate Dielectric Development for VLSI Technology
Published in:
Rapid Thermal Processing and beyond: Applications in Semiconductor Processing
(p133)
Characteristics of ZrO
2
/Al
2
O
3
Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method
Published in:
Designing, Processing and Properties of Advanced Engineering Materials
(p497)
Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100)
Published in:
Technology Evolution for Silicon Nano-Electronics
(p152)
Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy
Published in:
Silicon Carbide and Related Materials 2003
(p1317)
Interfacial Reaction-Controlled Deposition and Micropatterning of Oxide Thin Films for Gate Dielectrics
Published in:
Ceramic Interfaces: Properties and Applications V
(p139)
Investigation of Ultra Thin Thermal Nitrided Gate Dielectrics in Comparison to Plasma Nitrided Gate Dielectrics for High-Performance Logic Application for 65nm
Published in:
Rapid Thermal Processing and beyond: Applications in Semiconductor Processing
(p153)
Negative Field Reliability of ONO Gate Dielectric on 4H-SiC
Published in:
Silicon Carbide and Related Materials 2007
(p795)
Sputtering Preparation of Silicon Nitride Thin Films for Gate Dielectric Applications
Published in:
Advanced Materials Forum II
(p69)
Structural and Electronic Properties of the 6H-SiC(0001)/Al
2
O
3
Interface Prepared by Atomic Layer Deposition
Published in:
Silicon Carbide and Related Materials 2003
(p1369)
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