Keyword: "Hall-Effect"
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Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility

Authors: N.S. Saks, M.G. Ancona, Lori A. Lipkin

689

Barrier-Controlled Transport in Highly Doped Microcrystalline Silicon: Role of Interface States

Authors: S. Brehme, P. Kanschat, T. Weis, K. Lips, W. Fuhs

225

Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC

Authors: Takahiro Kinoshita, Kohei M. Itoh, J. Muto, M. Schadt, Gerhard Pensl, K. Takeda

295

Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons

Authors: Hans Heissenstein, Reinhard Helbig

369

Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect

Authors: Michael Laube, Gerhard Pensl, Kin Kiong Lee, Takeshi Ohshima

1381

Conduction Properties of Intergranular Phase in SrTiO3 -Bi2O3 Capacitors

Authors: S. Shibagaki, Kenji Ito, C. Akita, Junzo Tanaka, Hajime Haneda

117

Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method

Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl

111

Crystal Structure and Transport Properties of Sr2FeMoO6 Thin Films

Authors: W. Westerburg, D. Reisinger, Gerhard Jakob

549

Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates

Authors: W.C. Mitchel, William D. Mitchell, S.R. Smith, G.R. Landis, A.O. Evwaraye, Z.Q. Fang, David C. Look, J.R. Sizelove

505

Deep Levels in SiC:V by High Temperature Transport Measurements

Authors: W.C. Mitchel, Ronald Perrin, Jonathan Goldstein, Matthew D. Roth, M. Ahoujja, S.R. Smith, A.O. Evwaraye, J.S. Solomon, G. Landis, Jason R. Jenny, H. McD. Hobgood, G. Augustine, Vijay Balakrishna

545

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