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Articles by keyword: «Hall-Effect»

• Anomalous Behavior of van der Pauw Sheet Resistance Measurements on 4H-SiC MOS Inversion Layers with Anisotropy Mobility
  Published in: Silicon Carbide and Related Materials 2003 (p689)
• Barrier-Controlled Transport in Highly Doped Microcrystalline Silicon: Role of Interface States
  Published in: Polycrystalline Semiconductors VI (p225)
• Calculation of the Anisotropy of the Hall Mobility in n-Type 4H- and 6H-SiC
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p295)
• Characterization of SiC:P Prepared by Nuclear Transmutation Due to Neutrons
  Published in: Silicon Carbide and Related Materials 2000 (p369)
• Comparison of the Electrical Channel Properties between Dry- and Wet- Oxidized 6H-SiC MOSFETs Investigated by Hall Effect
  Published in: Silicon Carbide and Related Materials 2003 (p1381)
• Conduction Properties of Intergranular Phase in SrTiO₃ -Bi₂O₃ Capacitors
  Published in: Intergranular and Interphase Boundaries in Materials (p117)
• Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method
  Published in: Silicon Carbide and Related Materials - 1999 (p111)
• Crystal Structure and Transport Properties of Sr₂FeMoO₆ Thin Films
  Published in: EMMA-2000 (p549)
• Deep Level near E_C – 0.55 eV in Undoped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2005 (p505)
• Deep Levels in SiC:V by High Temperature Transport Measurements
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p545)
• Defects in Implanted Hg_1-xCd_xTe: Electrical and Structural Characterization
  Published in: Defects and Diffusion in Semiconductors (p21)
• Defects in Thick Epitaxial GaAs Layers
  Published in: Defects in Semiconductors 19 (p997)
• Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration
  Published in: Silicon Carbide and Related Materials 2005 (p597)
• Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
  Published in: Silicon Carbide and Related Materials 2003 (p35)
• Differential Hall-Effect Spectroscopy of Rare-Earth Impurities (Ce, Er) in Silicon
  Published in: Shallow Impurities in Semiconductors V (p279)