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Articles by keyword: «Heavy Doping»

• Boron Neutralization in Epitaxial Si Films Grown by Photo-CVD at Very Low Temperature (≦ 200°C)
  Published in: Defects in Semiconductors 18 (p867)
• Characterization of Double Stacking Faults Induced by Thermal Processing of Heavily N-Doped 4H-SiC Substrates
  Published in: Silicon Carbide and Related Materials 2003 (p581)
• Complex Diffusive Processes in Silicon
  Published in: Diffusion in Materials DIMAT 1996 (p971)
• Extremely Heavy Doping of Carbon in GaAs and InGaAs
  Published in: Shallow Impurities in Semiconductors V (p37)
• Influence of Impurity Band on Seebeck Coefficient in Heavily-Doped Si
  Published in: Global Research and Education (p197)
• Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers
  Published in: Silicon Carbide and Related Materials 2001 (p455)