Papers by Keyword: I-V Characteristic

Paper TitlePage

Current Transport Mechanisms in 4H-SiC PiN Diodes
Authors: Nicolas Camara, Edwige Bano, Konstantinos Zekentes
1017
Simulation Study of 4H-SiC Junction-Gated MOSFETs from 300 K to 773 K
Authors: Hyung Seok Lee, Sang-Mo Koo, Carl Mikael Zetterling, Erik Danielsson, Martin Domeij, Mikael Östling
1437
Diffusion-Welded Al Contacts to p-Type SiC
Authors: Oleg Korolkov, Toomas Rang, Alexander Syrkin, Vladimir Dmitriev
697
Electrical Characterization of Ni/Porous SiC/n-SiC Structure
Authors: A.E. Grekov, Stanislav I. Soloviev, Taniya Das, Tangali S. Sudarshan
419
Effect of Ho Amount on Microstructure and Electrical Properties of Ni-MLCC
Authors: Hirokazu Chazono, Hiroshi Kishi
183
Structural and Electrical Study of 4H-SiC CVD-Grown Layer with Micropipe Dissociation
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi
111
Realization of a High-Current and Low RON 600V Current-Limiting Device
Authors: F. Nallet, Philippe Godignon, Dominique Planson, Christophe Raynaud, Jean-Pierre Chante
1247
Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
Authors: Masayuki Imaizumi, Yoichiro Tarui, Hiroshi Sugimoto, Kenichi Ohtsuka, Tetsuya Takami, Tatsuo Ozeki
1203
A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated Micropipes
Authors: Isaho Kamata, Hidekazu Tsuchida, Tamotsu Jikimoto, Kunikaza Izumi
1137
4H- to 3C-SiC Polytypic Transformation during Oxidation
Authors: Robert S. Okojie, Ming Xhang, P. Pirouz, Sergey P. Tumakha, Gregg Jessen, Leonard J. Brillson
451
Showing 11 to 20 of 27 Paper Titles