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Articles by keyword: «Isothermal Capacitance Transient Spectroscopy ICTS»

• Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma
  Published in: Defects in Semiconductors 18 (p1973)
• Deep Level Investigation of pn-Junctions formed by MeV Aluminum and Boron Implantation into 4H-SiC
  Published in: Silicon Carbide and Related Materials 2000 (p451)
• Fast Growth and Doping Characteristics of α-SiC in Horizontal Cold-Wall Chemical Vapor Deposition
  Published in: Silicon Carbide and Related Materials 2001 (p183)
• Grain Boundary Electron Trap Levels in BaTiO₃ Positive Temperature Coefficient Type Ceramics
  Published in: Interfaces of Ceramic Materials (p39)
• Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials - 1999 (p757)