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Articles by keyword: «MESFET»

• 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials 2006 (p763)
• A Comparison of MESFETs on Different 4H-Silicon Carbide Semi-Insulating Substrates
  Published in: Silicon Carbide and Related Materials - 2002 (p737)
• Development of a Microstrip SiC MMIC Process
  Published in: Silicon Carbide and Related Materials 2005 (p1123)
• Effect of Passivation on Device Stability and Gate Reverse Characteristics on 4H-SiC MESFETs
  Published in: Silicon Carbide and Related Materials 2003 (p1177)
• Energy Efficiency: The Commercial Pull for SiC Devices
  Published in: Silicon Carbide and Related Materials 2005 (p1129)
• Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation
  Published in: Silicon Carbide and Related Materials 2003 (p1181)
• Fabrication and Testing of 4H-SiC MESFETs for Analog Functions Circuits
  Published in: Silicon Carbide and Related Materials 2009 (p1159)
• Fabrication of 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates
  Published in: Advances in Nanomaterials and Processing (p109)
• High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p1231)
• High Power Lateral Epitaxy MESFET Technology in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2004 (p853)
• High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation
  Published in: Silicon Carbide and Related Materials 2005 (p1239)
• Highly Uniform SiC Epitaxy for MESFET Fabrication
  Published in: Silicon Carbide and Related Materials 2005 (p195)
• High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device Characteristics
  Published in: Silicon Carbide and Related Materials 2004 (p869)
• Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient Spectroscopy
  Published in: Silicon Carbide and Related Materials 2004 (p865)
• Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance Spectroscopy
  Published in: Silicon Carbide and Related Materials 2004 (p397)