HOME CONTACT My eBook

Username: Password:

> @scientific.net

Articles by keyword: «Nitrogen Donor»

• (Nitrogen-Vacancy)-Complex Formation in SiC: Experiment and Theory
  Published in: Silicon Carbide and Related Materials 2006 (p307)
• Annealing Process of N⁺-/P⁺-Ions Coimplanted along with Si⁺-, C⁺- or Ne⁺-Ions into 4H-SiC – Governed by Formation of Electrically Neutral Complexes or by Site-Competition-Effect?
  Published in: Silicon Carbide and Related Materials 2003 (p909)
• Determination of Exciton Capture Cross-Sections of Neutral Nitrogen Donor on Cubic and Hexagonal Sites in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p341)
• Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
  Published in: Silicon Carbide and Related Materials 2005 (p601)
• Effective-Mass Theory of Shallow Donors in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p511)
• Electronic Raman Studies of Shallow Donors in Silicon Carbide
  Published in: Silicon Carbide and Related Materials 2005 (p579)
• Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si⁺-/N⁺-Co-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2004 (p641)
• Impact of Compensation on Optical Absorption Bands in the Below-Bandgap Region in n-Type (N) 6H-SiC
  Published in: Silicon Carbide and Related Materials - 2002 (p333)
• Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data Analysis
  Published in: Silicon Carbide and Related Materials 2001 (p545)
• Nitrogen Donors, Aluminum Acceptors and Strong Impurity Vibrational Modes in 4H-Silicon Carbide (4H-SiC)
  Published in: Defects in Semiconductors 17 (p69)
• On the Origin of the Below Band-Gap Absorption Bands in n-Type (N) 4H- and 6H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p645)
• Spin-Coupling in Heavily Nitrogen-Doped 4H-SiC
  Published in: Silicon Carbide and Related Materials 2008 (p343)
• Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC
  Published in: Silicon Carbide and Related Materials - 1999 (p745)