| Paper Title | Page |
|---|---|
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Authors: Y. Wang, Peter A. Losee, S. Balachandran, I. Bhat, T. Paul Chow, Y. Wang, B.J. Skromme, J.K. Kim, E.F. Schubert |
567 |
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Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient Authors: Roberta Nipoti, Fabio Bergamini, Francesco Moscatelli, Antonella Poggi, Mariaconcetta Canino, Giuseppe Bertuccio |
815 |
|
Authors: Masami Shibagaki, Masataka Satoh, Yasumi Kurematsu, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Shohei Miyagawa |
807 |
|
Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC Authors: Junji Senzaki, Kenji Fukuda, Kazuo Arai |
901 |
|
Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC Authors: Roberta Nipoti, Anindya Nath, Stefano Cristiani, Michele Sanmartin, Mulpuri V. Rao |
393 |
|
Authors: Fabio Bergamini, Shailaja P. Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E. Saddow, Roberta Nipoti |
819 |
|
Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC Authors: Erwan Oliviero, Mihai Lazar, Heu Vang, Christiane Dubois, Pierre Cremillieu, Jean Louis Leclercq, Jacques Dazord, Dominique Planson |
611 |