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Articles by keyword: «Post Implantation Annealing»

• Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing
  Published in: Silicon Carbide and Related Materials 2006 (p567)
• Current Analysis of Ion Implanted p⁺/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient
  Published in: Silicon Carbide and Related Materials 2005 (p815)
• Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing
  Published in: Silicon Carbide and Related Materials 2005 (p807)
• Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC
  Published in: Silicon Carbide and Related Materials 2003 (p901)
• Improving Doping Efficiency of P⁺ Implanted Ions in 4H-SiC
  Published in: Silicon Carbide and Related Materials 2010 (p393)
• Ion Implanted p⁺/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor
  Published in: Silicon Carbide and Related Materials 2005 (p819)
• Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC
  Published in: Silicon Carbide and Related Materials 2006 (p611)