Keyword: "Post Implantation Annealing"
Papers by keyword:
Paper Title Page

Achieving Low Sheet Resistance from Implanted P-Type Layers in 4H-SiC Using High Temperature Graphite Capped Annealing

Authors: Y. Wang, Peter A. Losee, S. Balachandran, I. Bhat, T. Paul Chow, Y. Wang, B.J. Skromme, J.K. Kim, E.F. Schubert

567

Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient

Authors: Roberta Nipoti, Fabio Bergamini, Francesco Moscatelli, Antonella Poggi, Mariaconcetta Canino, Giuseppe Bertuccio

815

Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing

Authors: Masami Shibagaki, Masataka Satoh, Yasumi Kurematsu, Kenji Numajiri, Fumio Watanabe, Shigetaka Haga, Kuniaki Miura, Tomoyuki Suzuki, Shohei Miyagawa

807

Effects of Annealing Conditions on Resistance Lowering of High-Phosphorus-Implanted 4H-SiC

Authors: Junji Senzaki, Kenji Fukuda, Kazuo Arai

901

Improving Doping Efficiency of P+ Implanted Ions in 4H-SiC

Authors: Roberta Nipoti, Anindya Nath, Stefano Cristiani, Michele Sanmartin, Mulpuri V. Rao

393

Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

Authors: Fabio Bergamini, Shailaja P. Rao, Antonella Poggi, Fabrizio Tamarri, Stephen E. Saddow, Roberta Nipoti

819

Use of Graphite Cap to Reduce Unwanted Post-Implantation Annealing Effects in SiC

Authors: Erwan Oliviero, Mihai Lazar, Heu Vang, Christiane Dubois, Pierre Cremillieu, Jean Louis Leclercq, Jacques Dazord, Dominique Planson

611