Papers by Keyword: Self-Formation Processes

Abstract: The analysis of technological trends nanoelectromechanical systems and processes of self-formation micro- and nanostructures in manufacturing MEMS/NEMS have been made and the requirements have been formulated. The results of modeling geometry nanostructures and the implementation of self-formation processes for creating new technologies of manufacturing MEMS/NEMS have also been presented.

Abstract: A model of the evolution geometry technological masks and underlaying layers in the lateral etching processes is created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The results of the simulation for the different configurations masks and selectivities of the underlaying layers have been presented.

Abstract: The analysis for basic processes of self-formation microstructure in technologies of manufacturing semiconductor devices and integrated circuits (IC) have been made and the requirements have been formulated. The results of the implementation of self-formation processes for creating new technologies of manufacturing semiconductor devices and IC have been presented.

Abstract: The model of the evolution of nano- and microstructures in the self-formation process of underetching (lateral etching) layers was created for analysis and design of new self-alignment and self-formation technologies semiconductor devices and integrated circuits. The program was realized on the basis of a personal computer with the processor INTEL PENTIUM 4 and MATLAB 5.3 software. The results of the simulation were given for the different initial configurations of nanostructures. The experimental investigations evolution of microstructures in lateral etching processes of amorphous and polycrystalline films were performed and the results presented.