Papers by Keyword: Single Wafer Cleaning

Abstract: Isopropyl alcohol (IPA) was used in the drying process to remove the contamination after the wet cleaning process. Regardless of the types of chemical solutions, the IPA is more strictly controlled because it is used. However, when the IPA was exposed to low acid concentration, the IPA polymers were generated to the di-isopropyl ether, isopropyl acetate, and di-isopropoxy methane. And the pH of IPA rapidly changed by about 1.99 in ppm level concentration. Generated IPA polymers were adsorbed on the wafer surface. These polymers can occur defects, and the probability increases as the concentration increases. Scanning mobility particle sizer (SMPS) measurement system can be measured the impurity in IPA solution. The total impurity concentration was increased by the concentration of H₂SO₄ with the same results in both gas chromatography mass spectrometry (GCMS) and time of flight secondary ion mass spectrometry (ToF-SIMS). SMPS results can be correlated with the concentration of impurities. In this paper, IPA polymers were defined by acid contamination, and these polymers have affected the Si wafer surface. In addition, the SMPS measurement system was introduced for the detection of impurities in IPA solutions.

Abstract: The use of highly corrosive chemicals to remove nano-particles on the surface of the wafer, results in substrate losses. This has resulted in the use of megasonics which provides acoustic cavitation to remove small particles. The megasonic wave does generate bubble cavitation which applies mechanical force to wafer structure, the violent cavitation such as transit cavitation or micro jet will damage the patterned structures [1,2]. A new megasonic technology is proposed in this paper, this technology provides stable control of bubble cavitation, without pattern damage at the different modes. The technology shows better particle performance when compared with the industry standard two-fluid nozzle cleaning technology. This Timely Energized Bubble Oscillation mode provides stable cavitation with a wide power window. It is unlike conventional megasonic which creates transit cavitation and damage when the bubble implodes. This new megasonic technology can be used to clean “sensitive” structures at 28nm and below without any pattern damage.

Abstract: Current work describes development, testing and verification of a single wafer megasonic cleaning method utilizing a transducer design that meets the extreme particle neutrality, Particle Removal Efficiency (PRE), and repeatability requirements of production scale wafer bonding and other applications requiring extremely low particle levels.

Abstract: The present work reports some approaches to reduce the static charge defects induced during single wafer cleaning process. Increase conductivity of DIW with CO₂, adding backside rinse and IPA drying sequence optimization were evidenced to be effective by surface potential difference with Quantox tool. TEM and EELS were also used for analysis of volcano-like discharge defects.

Abstract: Strained silicon engineering was first used at the 90-nm node. Nowadays, a series of techniques has seen wide-spread use and many derivatives are available because of their ease of integration and cost-effective features [ , ]. As a main part of stressor technique, embedded SiGe-S/D technology is reported to improve the pMOSFET drive current [ , ].

Abstract: The interaction between photo resist and highly polymerizing dry etch chemistries results in the deposition of fluoropolymers on the bevel and edge of silicon wafers. These polymers are inert to most aqueous processing chemicals, but exposure to HF lifts these polymers off the bevel. This results in migration of defects to the face of the wafers. The defects are generally found within 50mm from the edge of the wafer.

Abstract: High velocity aerosol cleaning using ultrapure water or dilute aqueous solutions (e.g. dilute ammonia) is common in semiconductor IC fabrication [1]. This process combines droplet impact forces with continuous liquid flow for improved cleaning efficiency of sub-100nm particles. As with any physically enhanced cleaning process, improved particle removal can be accompanied by increased substrate damage, especially to smaller (<80nm) features [2]. Solvents such as N-methylpyrrolidone (NMP) and tetrahydrofurfuryl alcohol (THFA) are used for resist strip applications [3]. It is possible, and sometimes useful, to deliver these solvents through the same spray nozzle normally used for aqueous spray cleaning. In this presentation we explore the particle removal and substrate damage performance of 2-ethoxyethanol (EGEE), NMP and THFA as used in a conventional aerosol spray cleaning system

Abstract: As 65nm technology in mass production and 45nm technology under development, post etch ash and cleaning faces new challenges with far more stringent requirements on surface cleanliness and materials loss. The introduction and integration of new materials, such as metal hard mask, creates additional requirements for wafer cleaning due to the occurrence of new defect modes related to metal hard mask. We have optimized a post etch ash process and developed a novel aqueous solution (AQ) based single wafer cleaning process to address these new defect modes. Physical characterization results and process integration electrical data are presented in this paper.

Abstract: To address the water mark issue from hydrophobic film drying, and the stringent particle removal requirements for the 45nm technology node and beyond, we developed a cleaner with an innovative single wafer Marangoni dryer. The single wafer Marangoni dryer design features and process characterization data are presented in this paper. The major results can be summarized as: (1) With the immersion type Marangoni dryer, as the wafer is lifted out of a DIW bath, a stable and uniform meniscus can be easily maintained, making the single-wafer Marangoni dryer ideal for drying hydrophilic, hydrophobic or hydrophobic/hydrophilic mixed patterned wafers; (2) The new Marangoni dryer leaves ~14nm [1] water film on the wafer after drying, therefore any dissolved or suspended materials contained inside the water film, and potentially left on the wafer surface after water evaporation, is less than 14nm in diameter. This feature is critical for the 45nm technology node and beyond because 23nm particle could be killer defects at these nodes [2]; (3) Because of the strong Marangoni flow effect, high aspect ratio features can be completely dried without leaving any water droplets inside the trenches; therefore copper corrosion can be prevented; (4) The Marangoni dryer uses N2 as the carrier gas, so when a wafer is lifted out of the degasified DIW bath through the N2/IPA spray zone, it is thoroughly dried in an oxygen-free environment before exposure to the ambient environment; (5) The Marangoni dryer is free of electrostatic charge and centrifugal force because of the slow (2mm/s~20mm/s) wafer linear lifting speed compared to linear speed at wafer edge during SRD.