Papers by Keyword: Spreading Resistance

Abstract: Computer-Aided-Design for the prediction of the technology process and the physical device properties (TCAD) is a key tool for the development and improvement of new device concepts as well as for the analysis and understanding of device properties and device behavior under application conditions. Apart from physical device models and parameters the precise process simulation of implanted doping profiles is mandatory for a sufficient prediction quality of the subsequent device simulations. In order to verify and improve the accuracy of process simulation, we employ the – for silicon carbide – relatively new method of Scanning Spreading Resistance Microscopy (SSRM) for the characterization of doping profiles.

Abstract: The axial distribution of electrical and optical properties of a 4 inch Czochralski-grown silicon single crystal were analyzed by different methods that can be applied in the scanning mode. These methods were tested with respect to the suitability to reveal growth striations. The residual stress was visualized by SIRIS (Scanning Infrared Stress Inspection System) and SIREX (Scanning Infrared Stress Explorer), the electrical resistivity by LPS (Lateral Photovoltage Scanning) and SRP (Spreading Resistance Profiling), and the lifetime of the minority charge carriers by MDP (Microwave Detected Photoconductivity) mapping. The concentration of interstitial oxygen (O_i) across the growth striations was determined by FTIR (Fourier Transform Infrared) spectroscopy. We demonstrate for the first time on the micrometer scale that the O_i scan is very well-correlated with the profile of Δσ (difference of the in-plane principal stress components). The stress field is tensile oriented in growth direction, i. e. perpendicularly to the growth striations. The stress-concentration coefficient has been estimated to be in the order of 10^-13 Pa cm^-3 what does agree well with previous XRD results.

Abstract: This paper presents results of the formation of high aspect nanostructures by local deposition of carbon, stimulated by focused ion beam (FIB). The structures used in the modification of the probe sensors were cantilevers for atomic force microscopy (AFM). The FIB structure of 5 mm length and 50 mm radius of curvature formed on the surface of the cantilever tip has shown to improve the accuracy of measurement by AFM. The outcome of this study is useful for the development of manufacturing processes and modification of the probe sensor-cantilever AFM structures of field-electron emitters as well as in the studies of micro- and nanosystems technology.

Abstract: The spreading resistance is a very important parameter in the applications of heat sink. The design of electronic devices will fail without considering the influence of the spreading resistance. In this paper, a simple thermal model was simulated by Computational Fluid Dynamics software. Some factors, which have great influence on the spreading resistance, have been analyzed. The spreading resistance decreases significantly with the increasing of the area ratio between the heat source and the base-plate. While the ratio being 1, the spreading resistance reaches the mix value. The greater the thermal conductivity of heat sink, the lower the spreading resistance. With the increasing of the thickness of base-plate, the spreading resistance reduces. However, if the thickness exceeds the critical value, the spreading resistance will increase. And the spreading resistance reaches the mix value while the centers of heat source and the base-plate are overlapped.

Abstract: In this paper, an investigation on structure function of LED for thermal resistance testing is presented. LED was placed on aluminum plate in different locations. Four group experiments were applied to determine thermal resistance of LED. A simple and effective solution is proposed and discussed on the spreading resistance. The experimental results show the relationship between junction temperature and different locations.

Abstract: The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.