HomeSublimation Growth

Papers by Keyword: Sublimation Growth

Paper TitlePage

Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC

Authors: Edward M. Sanchez, V.D. Heydemann, David Snyder, Gregory S. Rohrer, Marek Skowronski

Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process

Authors: D.D. Avrov, Sergey I. Dorozhkin, Andrew O. Lebedev, V.P. Rastegaev, Yuri M. Tairov

1515

Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method

Authors: Norbert Schulze, Donovan L. Barrett, Michael Weidner, Gerhard Pensl

111

Shape of SiC Bulk Single Crystal Grown by Sublimation

Authors: Shin Ichi Nishizawa, Yasuo Kitou, Wook Bahng, Naoki Oyanagi, Muhammad Nasir Khan, Kazuo Arai

Pressure Effect in Sublimation Growth of Bulk SiC

Authors: Yasuo Kitou, Wook Bahng, Shin Ichi Nishizawa, Shigehiro Nishino, Kazuo Arai

Numerical Simulation of SiC Boule Growth by Sublimation

Authors: Roland Madar, Michel Pons, Jean Marc Dedulle, Elisabeth Blanquet, Alexander Pisch, Philippe Grosse, Christian Faure, Mikhail Anikin, Claude Bernard

Seed Surface Preparation for SiC Sublimation Growth

Authors: Bernard Pelissier, Cécile Moulin, Etienne Pernot, Mikhail Anikin, Philippe Grosse, Christian Faure, Bernard Ferrand, M. Couchaud, Gérard Basset, Roland Madar

Large Diameter PVT Growth of Bulk 6H SiC Crystals

Authors: David Snyder, V.D. Heydemann, W.J. Everson, Donovan L. Barrett

Modeling Analysis of Temperature Field and Species Transport Inside the System for Sublimation Growth of SiC in Tantalum Container

Authors: Yu.E. Egorov, A.O. Galyukov, S.G. Gurevich, Yuri Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, A.S. Segal, Yu.A. Vodakov, A.N. Vorob'ev, A.I. Zhmakin

Enlargement of SiC Crystals: Defect Formation at the Interfaces

Authors: Mikhail Anikin, Michel Pons, K. Chourou, O. Chaix-Pluchery, Jean Marie Bluet, V. Lauer, R. Pons