Papers by Keyword: TFT

Abstract: In clinical care, intravenous infusion is one of the best ways for continuous drug delivery or clinical therapy. In most medical institutions, the workload of nurses and patient care increases due to fluctuating populations. This causes an increase in the work intensity of medical personnel. If the infusion is not monitored properly, it will lead to a medical accident. The problem is also affected due to the lack of economical and automatic infusion monitoring devices. In this case, it is proposed to design an automatic infusion control instrumentation that can detect the presence of air bubbles in the infusion to prevent air bubbles from entering the body and detect the rate of infusion flow. The proposed device is equipped with Thin Film Transistor technology (TFT) which functions to display and enter information about the condition of the intravenous infusion and a buzzer as a reminder alarm when an undesirable condition occurs. System accuracy and precision are verified for all flow rates. The results of the drops per minute test show accuracy with an error percentage of less than 2% within 1 minute. The device can detect the presence of air bubbles at high speed for response times below 20 ms and reduce the possibility of air bubbles escaping in the infusion hose according to the system test results that have been carried out. In the evaluation using target 20 drops per minute the infusion flow rate changes stably according to the angular movement of the servo motor. So it is hoped that the proposed system can help officers to monitor the condition of infusion and reduce the work intensity of medical workers.

Abstract: In this paper, we presented Hall magnetic sensors based on nano-polysilcon thin film transistors(TFTs). These sensors are fabricated on the <100> orientation high resistivity silicon substratesby using complementary metal oxide semiconductor (CMOS) technology and adopting thenano-polysilicon thin films with thickness of 82 nm as the channel layers of TFTs. The influence ofthe channel layer doping type and channel length-width radio of TFT on sensor's sensitivity was investigated.When the supply voltage is 5.0 V, the maximum measured sensitivity of p-type channel andn-type channel sensors are about 8.5 mV/T and 25.6 mV/T, respectively. These experimental resultsmean that nano-polysilicon thin films present an application on Hall magnetic sensors.

Abstract: The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compound is presented. It is demonstrated that the addition of appropriate dopant, gallium, in ZnON, suppresses the formation of shallow donor, nitrogen vacancies, and significantly improves electrical characteristics of the resulting TFT. The Ga:ZnON devices with field-effect mobility values exceeding 50 cm²/Vs are achieved, which makes them suitable as switching or driving elements in next-generation flat-panel displays.

Abstract: This paper introduces the realization method based on CPLD TFT - LCD digital display controller, using CPLD implement timing generation of TFT-LCD display, image processing, and dual memory read and write rotation control function. Methods of the design can be based on the actual function of mission requirements, the interface functions of the dedicated display control chip cutting, custom display control functions, enhance system reliability and design flexibility. It can be applied to a liquid crystal display control unit, to solve practical engineering problems.

Abstract: Upload utilization is one of the most significant performance metrics in BitTorrent system, whereas there has been no accurate model which is suitable for it yet. For this reason, the delicate relation between some key parameters (maximum concurrent uploads, upload bandwidth, TFT round etc.) in BitTorrent is investigated, furthermore the piece diffusion model and the upload utilization model are proposed. Based on these models, we explore the effect of TFT round for the first time and find that the magnitude of TFT round has a significant influence on the transient stage as well as the end stage. Additionally, we show that when the seed’s upload bandwidth is fully utilized, to achieve optimal performance, each peer’s upload bandwidth should be proportional to its maximum concurrent uploads, and the file size should be large enough compared with the swarm size.

Abstract: The deterioration of continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs) under surface channel hot-carrier (CHC) stress (VDS=16 V and VGS=16 V labeled as a CHC-1 stress) was studied. The electrical properties of trap states containing interface trap states of gate oxide and poly-Si channel and grain boundary trap states were characterized by capacitance-voltage (C-V) measurement. In addition, while a higher stress voltage, CHC-2 stress at VDS=18 V and VGS=18 V, was adopted, the increase of interface trapped charges was obviously observed.

Abstract: Continuous-wave green laser-crystallized (CLC) single-grainlike polycrystalline silicon n-channel thin-film transistors (poly-Si n-TFTs) exhibit the higher electron mobility and turn-on current than excimer laser annealing (ELA) poly-Si n-TFTs. Furthermore, high drain voltage accelerates the flowing electrons in n-type channel, and hence the energized electrons possibly cause a serious damage near the drain region and deteriorate the source/drain (S/D) current. Using this good reliability metrology to verify the quality of CLC n-TFTs was adopted. The degradation mechanisms of S/D current for CLC poly-Si n-TFTs were firstly investigated by measuring the gate-to-drain overlap capacitor, and with the drain-avalanche hot-carrier stresses at 2VGS = VDS =14 V and 2VGS =VDS =18 V in temperature environment, 25 oC and 50 oC.

Abstract: Thin-film transistors (TFT) usually exhibit non-uniform electrical characteristics fabricated by the identical process because of the formation of the grain boundary traps, bulk grain traps, interface states and some defects on channel region. All the traps and defects affecting the electrical characteristics of TFTs can be thermally and electrically activated. In this study, the temperature effect accompanying the horizontal and vertical electric fields stressing on continuous-wave green laser-crystallized (CLC) single-grain-like poly silicon TFTs (poly-Si TFTs), presenting the excellent effective electron mobility, up to 530 cm^2/V-s, was firstly investigated.

Abstract: The positive-bias temperature instability (PBTI) test is one of effective reliability evaluation tests in negative-channel metal-oxide-semiconductor field-effect transistor (nMOSFET) to expose the bonding interface between channel surface and gate dielectric and the integrity of gate dielectric. Adopting this test metrology in thin-film transistor (TFT) on glass substrate to reveal the previous concerns is still suitable. Using this good methodology in continuous-wave (CW) green laser-crystallization (CLC) poly-Si TFT, demonstrating a greatly effective mobility 530 cm^2/V-s, is necessary to interpret the defect generation and the device degradation under high gate-voltage stress and temperature impact, 25 oC to 125 oC. Because the channel surface of the CLC poly-Si TFT was not strictly smooth, the micro roughness in this stress caused more generation of interface states. The grain-boundary trap states in poly-crystalline channel, additionally, were generated after stress.