HomeVacancy

Papers by Keyword: Vacancy

Paper TitlePage

Effect of Excess Vacancies on Hydrogen Absorption-Desorption Characteristics in Rapidly Solidified B2 TiCo

Authors: Minseok Sung, Tomohide Haraguchi, Kyosuke Yoshimi, Shuji Hanada

3727

Point Defects in FeAl Studied by Perturbed Angular Correlation

Authors: Gary Scott Collins, Luke S.J. Peng, Matthew O. Zacate

107

Vacancy Diffusion in Non-Symmetrical Grain Boundaries in α-Zr

Authors: Julián R. Fernández

31

Structure of Grain Boundaries of a General Type and Mechanisms of the Grain Boundary Internal Friction Peak

Authors: B.M. Darinskii, Y. Kalinin, S.V. Mushtenko, D.S. Sajko

203

Monte Carlo Theoretical Study of Defect Generation at Heterovalent ZnSe/GaAs Epitaxial Interfaces

Authors: Takashi Nakayama

103

Effects of Simultaneous Displacive and Ionizing Radiation in Ionic and Covalent Crystals

Authors: Kazuhiro Yasuda, C. Kinoshita, Syo Matsumura

53

Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiC

Authors: Rajesh Kumar Malhan, J. Kozima, Tetsuya Yamamoto, A. Fukumoto

541

EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiC

Authors: Norikazu Mizuochi, Junichi Isoya, Satoshi Yamasaki, H. Takizawa, Norio Morishita, Takeshi Ohshima, Hisayoshi Itoh

497

Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy

Authors: Atsuo Kawasuso, Michael Weidner, F. Redmann, Thomas Frank, Reinhard Krause-Rehberg, Gerhard Pensl, Peter Sperr, Werner Triftshäuser, Hisayoshi Itoh

489

The Nature and Diffusion of Intrinsic Point Defects in SiC

Authors: M. Bockstedte, Matthias Heid, Alexander Mattausch, Oleg Pankratov

471