A Novel Anti-Fuse Based on (Ba, Sr)TiO3(BST) and Pb(Zr, Ti)O3 (PZT) Thin Films

Qian Ying Tang; Yuan Liu; Ya Fan He; Ping Li; Xiao Dong Xie; Gang Wang

doi:10.4028/www.scientific.net/AMM.187.231

Paper Titles

Improvement of Corrosion Resistance of Rare Earth Element (REE)-Based Anodic Oxidation Coating on AZ91D Magnesium Alloy
p.210

Enhancement of Mica Paper Insulation Strength with Surface Modification
p.215

Index Loss Analysis of YBCO Coated-Conductor Coils by Means of Simulation
p.220

The Synthesize and Properties of Aquosity Polyester Acrylate Nanoemulsion
p.227

A Novel Anti-Fuse Based on (Ba, Sr)TiO₃(BST) and Pb(Zr, Ti)O₃(PZT) Thin Films
p.231

Fiber-Optic Electric Field Sensor Based on Electrostriction Effect
p.235

Life Prediction for Silicon Pressure Sensor Based on SVR
p.241

Research on Ytterbium Doped Phosphate Glasses
p.245

Synthesis of an Oxidation Resistant Coating for Ni-Based High Temperature Structural Materials by Dip Coating
p.251

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 187A Novel Anti-Fuse Based on (Ba, Sr)TiO3(BST) and...

A Novel Anti-Fuse Based on (Ba, Sr)TiO₃(BST) and Pb(Zr, Ti)O₃(PZT) Thin Films

Abstract:

This paper presents a new application of (Ba, Sr)TiO3(BST) and Pb(Zr, Ti)O3 (PZT) thin films in anti-fuse and their resulting anti-fuse behaviors. Compared with amorphous silicon, BST and PZT anti-fuses demonstrate distinct advantages: lower on-state resistance and lower breakdown electric field. With the sandwich-like structure of Pt/Ferroelectric Ceramics/Pt, the devices exhibit an apparent anti-fuse behavior. The resistivity of BST structure switches from 6.7 MΩ to 12.3 Ω at the average breakdown electric field of 0.3 MV/cm, while the PZT structure switches from 106 MΩ to 10.7 Ω at the average breakdown electric field of 1.3 MV/cm. Finally, the prospect of using BST and PZT is discussed and suggestions for their improvements are proposed.

You might also be interested in these eBooks

Mechanical, Industrial and Manufacturing Technologies

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volume 187)

Pages:

231-234

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.187.231

Citation:

Cite this paper

Online since:

June 2012

Authors:

Qian Ying Tang, Yuan Liu, Ya Fan He, Ping Li, Xiao Dong Xie, Gang Wang

Keywords:

Anti-Fuse, BST, PZT

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] WANG Binsheng, AN Weiguang, ZHANG Dan. Electrical Breakdown Mechanics and Reliability Analysis for PZT Piezoelectric Ceramics, Journal of Harbin Engineering University, 2008 29(4): pp.337-341.

Google Scholar

[2] ZHOU, Zhigang; WU, Yugong; ZHANG, Yalin; LU0, Jinling. The Thermo-mechanical Breakdown of Ferroelectric Ceramics. Proceedings of the 3rd International Conference on Properties and Applications of Dielectric Materials, July 8-12, 1991 Tokyo, Japan.

DOI: 10.1109/icpadm.1991.172291

Google Scholar

[3] Yosi Shacham-Diamand. Filament Formation and the Final Resistance Modeling in Amorphous-Silicon Vertical Programmable Element, IEEE Transactions on Electron Devices, Vol. 40, No. 10, Oct. (1993).

DOI: 10.1109/16.277334

Google Scholar

[4] ZHANG Bang-wei. High k Gate Dielectric and Materials Si Nanotransistor, Micronanoelectric Technology, 2006(3).

Google Scholar

[5] T. Busania, R. A. B. Devine. Nonvolatile memory and anti-fuse behavior in Pt/a-TiO2 /Ag structures, J. Vac. Sci. Technol. B, Vol, 26, No. 5, Sep/Oct (2008).

Google Scholar

[6] A. J. LaDuca. Amorphous Silicon Based Anti-Fuse, IEEE 1993 Bipolar Circuits and Technology Meeting 1. 2.

DOI: 10.1109/bipol.1993.617459

Google Scholar

[7] S. Maruno, T. Kuroiwa, N. Mikami, K. Sato, S. Ohmura, M. Kaida, T. Yasue, T. Koshikawa Model of leakage characteristics of (Ba, Sr)TiO3thin films, Applied Physics Letters, Vol. 73, No. 7 17 August.

DOI: 10.1063/1.122050

Google Scholar