Effect of Multilayer Technology on Surface Properties of Diamond Coated Silicon Carbide with Surface Defects

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Abstract:

Low surface roughness of diamond films is beneficial for the widespread applications in the mechanical field. But brittle ceramic substrate easily forms surface defects, which can be detrimental for surface properties of diamond films. In this work, multilayer technology combining conventional hot filament chemical vapor deposition (HFCVD) is proposed to eliminate the influence of surface defects in the substrate on diamond films. Then multilayer diamond films are deposited on silicon carbide with surface defects by alternately repeating the processes of diamond films growth and surface polishing. Each layer of multilayer diamond films is evaluated by field emission scanning electron microscope (FE-SEM), surface profilometer and Raman spectrum. The results show that multilayer technology is supposed to be a novel deposition method of improving the surface properties of diamond coated the silicon carbide ceramic substrate with surface defects.

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1318-1322

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November 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] Q. Liang, Y. K. Vohra and R. Thompson: Diam. Relat. Mater. Vol. 17 (2008), pp.2041-2047.

Google Scholar

[2] S. Chowdhury, M. T. Laugier and J. Henry: Int. J. Refract. Met. Hard Mater. Vol. 25 (2007), pp.39-45.

Google Scholar

[3] M. A. Neto, A. J. S. Fernandes, R. F. Silva and F. M. Costa: Diam. Relat. Mater. Vol. 17 (2008), pp.440-445.

Google Scholar

[4] S. Fanghong, M. Yuping, S. Bin, Z. Zhiming and C. Ming: Diam. Relat. Mater. (2009), pp.276-82.

Google Scholar

[5] R. Polini, F. Bravi, F. Casadei, P. D'Antonio and E. Traversa: Diam. Relat. Mater. Vol. 11 (2002), pp.726-730.

Google Scholar

[6] S. J. Bull, P. R. Chalker, C. Johnston and V. Moore: Surf. Coat. Technol. Vol. 68 (1994), pp.603-610.

Google Scholar

[7] S. Abraham, C. J. McHargue, R. E. Clausing, L. Heatherly and J. D. Hunn: Diam. Relat. Mater. Vol. 4 (1995), pp.261-267.

Google Scholar

[8] N. C. Chen and F. H. Sun: J. Nanomater. Vol. 2011 (2011), p.910372.

Google Scholar

[9] S. Prawer and R. J. Nemanich: Philos. Trans. R. Soc. London, Ser. A Vol. 362 (2004), pp.2537-2565.

Google Scholar

[10] R. V.G., S. A.A., P. V.G., O. E.D., K. K.G., K. V.I., L. Yu.V. and L. E.N.: Diam. Relat. Mater. Vol. 4 (1995), pp.754-758.

Google Scholar