Analyzing p-MOSFET Lifetime by Employing R-D Model & MOS Device Theory

Abstract:

For CMOS circuitry the models which are able to determine the reliability of the components and the methods which lead them to the degradation of the reliability issues are very important. Negative bias temperature instability (NBTI) is a critical issue for the p-MOSFETs. It causes, shifting of drive current and threshold voltage of P-MOSFET. Till date many models capable of simulating various features of the NBTI degradation have been proposed by researchers. Reaction Diffusion (R-D) model is notable among them. This paper demonstrates a new approach which analyzes the combination of R-D model and transistor theories. To do so, we analytically correlated R-D model and device theory. The analysis shows the lifetime estimation for p-MOSFET device with respect to drain current.

• Periodical: Applied Mechanics and Materials (Volumes 229-231)
• Pages: 1626-1629
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.229-231.1626
• Online since: November 2012
• Authors: Sadia Manzoor, Nissar Mohammad Karim, Norhayati Soin
• Keywords: NBTI, p-MOSFET Lifetime, RD Model, Reliability

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