Design of Quantum Dot Based LASER with Ultra-Low Threshold Current Density

M.A. Humayun; M.A. Rashid; F.A. Malek; Ali Hussain; I. Daut

doi:10.4028/www.scientific.net/AMM.229-231.1639

Paper Titles

Design and Analysis of a CPW-Fed Broadband Conical Conformal Antenna
p.1622

Analyzing p-MOSFET Lifetime by Employing R-D Model & MOS Device Theory
p.1626

Current Delivered by an STM Tip in Landauer-Büttiker Formalism
p.1630

High Speed Data Transmission Using Coding
p.1635

Design of Quantum Dot Based LASER with Ultra-Low Threshold Current Density
p.1639

Improved Particle Swarm Optimization (PSO) for Performance Optimization of Electronic Filter Circuit Designs
p.1643

Design and Analysis of Low Power CNTFET TSPC D - Flip Flop Based Shift Registers
p.1651

Design and Analysis of N-Type CNTFET Based 2 X 1 Multiplexer
p.1656

Convection-Enhanced Intratumoral Nanoparticle Drug Delivery Modeling
p.1665

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 229-231Design of Quantum Dot Based LASER with Ultra-Low...

Design of Quantum Dot Based LASER with Ultra-Low Threshold Current Density

Abstract:

Reduction in threshold current density is the major challenge in the field of semiconductor laser design. The threshold current density can be minimized by introducing low dimensional material system with narrow band gap. InN has a narrow band gap of 0.7 eV and quantum dot provides three dimensional confinement factor. In this paper, we propose then InN quantum dot as the active layer material that will serve both the purpose of narrow band gap and three dimensional confinement. The simulation results show that the current density reduces drastically with the cavity length.

You might also be interested in these eBooks

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 229-231)

Pages:

1639-1642

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.229-231.1639

Citation:

Cite this paper

Online since:

November 2012

Authors:

M.A. Humayun, M.A. Rashid, F.A. Malek, Ali Hussain, I. Daut

Keywords:

Cavity Length, Heterostructure, InN, Quantum Dot (QD), Threshold Current

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

Google Scholar

[2] Y. Arakawa and H. Sakaki: Multidimensional Quantum Well LASER and Temperature Dependence of its Threshold Current, Appl. Phys. Lett., vol. 40, no. 11, p.939–941, 1982.

DOI: 10.1063/1.92959

Google Scholar

[3] Y. Arakawa, Takao Someya and Koichi Tachibana: Growth and Physics of Nitride-based Quantum Dots for Optoelectronics Applications, IPAP Conf. Series 1 pp.403-408 Proc. Int. workshop on nitride semiconductor.

Google Scholar

[4] Abdelmajid Salhi, Gabriele Rain`o, Laura Fortunato, Vittorianna Tasco, Giuseppe Visimberga, Luigi Martiradonna, Maria Teresa Todaro, Milena De Giorgi, Roberto Cingolani, Achim Trampert, Massimo De Vittorio, and Adriana Passaseo: Enhanced Performances of Quantum Dot Lasers Operating at 1. 3 μm , IEEE Journal on Selected Topics in Quantum Electronics, Vol. 14, No. 4, July/August (2008).

DOI: 10.1109/jstqe.2008.916182

Google Scholar

[5] D. Bimberga,M. Grundmanna, F. Heinrichsdorffa, N.N. Ledentsovb, V.M. Ustinovb, A.E. Zhukovb, A. R. Kovshb, M. V. Maximovb, Y. M. Shernyakovb, B. V. Volovikb, A. F. Tsatsul'nikovb, P. S. Kop'evb, Zh.I. Alferov: Quantum Dot LASERS : breakthrough in optoelectronics, Thin Solid Films 367 (2000).

Google Scholar

[6] S. Franchi, G. Trevisi, L. Seravalli, P. Frigeri: Quantum dot nanostructures and molecular beam epitaxy, Progress in Crystal Growth and Characterization of Materials 47 (2003) 166e195.

DOI: 10.1016/j.pcrysgrow.2005.01.002

Google Scholar

[7] D. Bimberg N.N. Ledentsovb, M. Grundmann F. Heinrichsdorff, V.M. Ustinovb P.S. Kopev Zh.I. Alferov, Edge and Vertical cavity Surface Emitting InAs Quantum Dot Laser, Solid State Electronics Vol. 42 No. 7-8 pp.1433-1437, (1998).

DOI: 10.1016/s0038-1101(98)00044-6

Google Scholar