TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-Gan Nucleation Layer

Jamreonta Parinyataramas; Sakuntam Sanorpim; Chanchana Thanachayanont; Hiroyaki Yaguchi; Misao Orihara

doi:10.4028/www.scientific.net/AMM.229-231.219

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TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-Gan Nucleation Layer
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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 229-231TEM Analysis of Structural Phase Transition in MBE...

TEM Analysis of Structural Phase Transition in MBE Grown Cubic InN on MgO (001) by MBE: Effect of Hexagonal Phase Inclusion in an C-Gan Nucleation Layer

Abstract:

In this paper, we introduced dbcube topology for Network-on Chips(NoC). We predicted the dbcube topology has high power and low latency comparing to other topologies, and in particular mesh topology. By using xmulator simulator,we compared power and latency of this topologyto mesh topology. Finally, it is demonstrated that the network has higher power and lower latency than the mesh topology.

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Applied Mechanics and Materials (Volumes 229-231)

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219-222

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https://doi.org/10.4028/www.scientific.net/AMM.229-231.219

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Online since:

November 2012

Authors:

Jamreonta Parinyataramas, Sakuntam Sanorpim, Chanchana Thanachayanont, Hiroyaki Yaguchi, Misao Orihara

Keywords:

Buffer Layer, Cubic InN, Hexagonal-Phase Inclusion, TEM

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