Measurement of Semiconductor Silicon Wafer’s Doping Concentration and it’s Uniformity Based on Thermo-Needles Method

Abstract:

In semiconductor industry, carrier concentration of a semiconductor material needs to be measured. Theoretical computation is complex and has its limitation. Experiment measurement always needs complicated and expensive instruments. Here, a new method for measuring the carrier concentration of silicon wafer was put forward. The dependen curve of thermoelectromotive force on temperature was graphed. The results showed that when temperature is below 460K, thermoelectromotive force is proportional to temperature of the hot probe. With the help of Origin software, slope of curve was obtained.Accoeding to related formula,the doping concentartion and it’s uniformity were figured out finally .Compared with other similar methods, this method is more simplified and thet equipment is cheaper.

• Periodical: Applied Mechanics and Materials (Volumes 239-240)
• Pages: 726-729
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.239-240.726
• Online since: December 2012
• Authors: Qiao Liang Wang, Yu Zhao, Rui Feng Lv, Yan Yan Zhu
• Keywords: Carrier Concentration, Doping Concentration, Thermoelectromotive Force

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