A study of a Silicon Carbide Capacitive Pressure Sensor Applied in Harsh Environment

Hao Jie Lv; Hui Yong Yu; Jiang Hua Hou; Tao Geng

doi:10.4028/www.scientific.net/AMM.241-244.984

Paper Titles

Research on Link Loss Rate Inference Based on Data Aggregation in Wireless Sensor Network
p.967

RFID Indoor Localization Algorithm Based on PSO
p.972

A Design and Implementation for Optical Fibre Vibration Sensor
p.976

Ion Mobility Spectrometry for Monitoring Chemical Warfare Agents
p.980

A study of a Silicon Carbide Capacitive Pressure Sensor Applied in Harsh Environment
p.984

Research on a New Stress Sensor Based on the Amorphous Alloy
p.988

Based on Multi-Sensor Data Fusion Operating Machinery Velocity Monitoring System
p.993

Ground Surface Deformation Sensor Based on Cable Impedance
p.998

Smart Building Control Based on Wireless Sensor-Actuator Networks
p.1004

HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 241-244A study of a Silicon Carbide Capacitive Pressure...

A study of a Silicon Carbide Capacitive Pressure Sensor Applied in Harsh Environment

Abstract:

In the paper, a Double-notches Touch Mode Capacitive Pressure Sensor (DTMCPS) is presented. The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in high-temperature environment. The simulation analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has higher sensitivity and longer linear range than traditional one. At the same time, the technical process of the sensor has been designed in the paper. The research shows that DTMCPS packaged in a high-temperature ceramic package can withstand higher temperature. Consequently, the sensor can be applied in high-temperature and harsh environment.

You might also be interested in these eBooks

Industrial Instrumentation and Control Systems

View Preview

Info:

Periodical:

Applied Mechanics and Materials (Volumes 241-244)

Pages:

984-987

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.241-244.984

Citation:

Cite this paper

Online since:

December 2012

Authors:

Hao Jie Lv*, Hui Yong Yu, Jiang Hua Hou, Tao Geng

Keywords:

Capacitive Pressure Sensor, Silicon Carbide (SiC), Technical Process

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] G.L. Pearson, W.T. Read, Jr., and W.L. Feldman: Acta Met., Vol. 5 (1957), p.181.

Google Scholar

[2] Pasqualina M. Sarro: Sensors and Actuators, Vol. 82 (2000), p.210.

Google Scholar

[3] H.J. Lv, Q. Guo and G.Q. Hu: 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems, Sanya, China (2008).

Google Scholar

[4] W.H. Ko and Q. Wang, Sensors and Actuators A, 75, 242 (1999).

Google Scholar

[5] Victor V. Luchinin, Andrey V. Korlyakov and Alexander A. Vasilev: The Symposium on Design, Test and Microfabrication of MEMS and MOEMS, Paris, France (1999).

Google Scholar

[6] H.J. Lv, G.Q. Hu, W. Zou, C.Y. Wu and Y.F. Chen: Optics and Precision Engineering, Vol. 18 (2010) No.5, P.1166. (In Chinese)

Google Scholar

[7] S. Timoshenko and S. Woinowsky-Kreger: Theory of Plates and Shells, 2nd Ed (MacGraw-Hill, New York 1959).

Google Scholar

[8] K. Nath and Alfred B. Anderson: Physical Review B, Vol. 40 (1989), p.7916.

Google Scholar