Interfacial Microstructure of Diffusion-Bonded and Annealed Cu-10Fe/Al6061 Clad Material

Abstract:

Diffusion bonding between the Cu-10%Fe and Al6061 alloys were successfully achieved at various temperatures (450-525°C) in the argon atmosphere. The bonding interface regions were analyzed using scanning electron microscopy and energy dispersive spectrometry and XRD. The presence of Fe particles in Cu was found to have an influence on the kinetics of intermetallic compound layer formation. Cu-Fe/Al 6061 exhibited the slower growth rate of intermetallic layers than Cu/Al 6061 after diffusion bonding. The movement of Cu-Fe/Cu9Al4 interface into Cu-Fe substrate appears to be hindered by the presence of populated Fe-containing particles and filaments. In addition to Cu9Al4, CuAl and CuAl2 intermetallic layers, Al7Cu2Fe and unreacted Fe were observed to be present in the intermetallic layers. The intermetallic layers which are close to Cu such as Cu9Al4 and CuAl were observed to be harder in Cu-10%Fe/Al 6061 than in Cu/Al 6061, suggesting Fe and its intermetallics have some strengthening effect on Cu9Al4 and CuAl.

• Periodical: Applied Mechanics and Materials (Volume 248)
• Pages: 60-65
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.248.60
• Online since: December 2012
• Authors: Ju Young Jin, Sun Ig Hong
• Keywords: AA6061 Aluminum Alloy, Cu-10%Fe, Diffusion Bonding (DB), Interfacial Reaction, Intermetallic Compound

References

[1] Kim, J.K., Yu, T.X., J. Materials Processing Technology. 1 (1997) 63.

[2] J.E. Lee, D.H. Bae, W.S. Chung, K.H. Kim, J.H. Lee, Y.R. Cho, J. Materials Processing Technology. 12 (2007) 187.

[3] K.Y. Rhee, W.Y. Han, H.J. Park, S.S. Kim, Materials Science and Engineering. 1 (2004) 384.

[4] Ravisankar B, Krishnamoorthi J, Ramakrishnan SS, Angelo PC, J. Mater Process Tech. 4 (2009) 209.

[5] Sabetghadam H, Hanzaki AZ, Araee A, J. Alloys and Compounds. 1 (2009) 477.

[6] C. G Kang, Y. J Jung, H. C Kwon, J. Materials Processing Technology. 1 (2002) 124.

[7] C.J. Hang, C.Q. Wang, M. Mayer, Y.H. Tian, Y. Zhou, H.H. Wang, Microelectronics Reliability. 3 (2008) 48.