Post-Annealing on the Electrical Properties of Ta-Doped In2O3 Transparent Conductive Films

Lei Xu; Rui Wang; Qi Xiao

doi:10.4028/www.scientific.net/AMM.251.387

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 251Post-Annealing on the Electrical Properties of...

Post-Annealing on the Electrical Properties of Ta-Doped In₂O₃ Transparent Conductive Films

Abstract:

Ta-doped In2O3 transparent conductive oxide (TCO) films are deposited on glass substrates by radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical, and optical properties of the films is investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall measurement, and optical transmission spectroscopy. The obtained films are polycrystalline with a cubic structure and preferentially oriented in the (222) crystallographic direction. The lowest resistivity of 5.1 × 10−4 Ω•cm is obtained from the film annealed at 500°C, which is only half of that from the un-annealed film (9.9 × 10-4 Ω).

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Periodical:

Applied Mechanics and Materials (Volume 251)

Pages:

387-391

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.251.387

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Online since:

December 2012

Authors:

Lei Xu, Rui Wang, Qi Xiao

Keywords:

Electrical Properties, Optical Property, Radio-Frequency Sputtering, Semiconductor, Transparent Conductive Films

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