Modeling on the Ground Wafer Shape in Wafer Rotational Grinding

Abstract:

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During the silicon wafer grinding, the different process parameters could cause the silicon wafer shape greatly different. Based on the rotational coordinate principle of kinematics, a theoretical model of the ground wafer shape in rotational grinding process is developed, in which many critical factors are considered in this paper. These factors mainly include the parameters of the dressing vacuum chuck and wafer grinding etc. And the mathematical equation of the ground wafer shape is derived. Moreover, as one of the important indexes, TTV(total thickness variation) is researched and analyzed. The equation of TTV is given. The built model can offer a theoretical foundation for further experimental researching. The research results are significant to effectively control the ground wafer shape in a certain.This paper applied the Autonomous Intelligent System(AIS) to deal with the intelligent activities intelligently and automatically, and thereof provided a new method for the Supply Chain Management(SCM) on MC manufacture. First, a new supply chain model based on E-HUB was presented according to the requirements of MC manufacture, and then the structure and operation of AIS were designed to support that SCM. Finally, the development technology of AIS was discussed.

Info:

Periodical:

Edited by:

Zhenyu Du and Bin Liu

Pages:

694-697

DOI:

10.4028/www.scientific.net/AMM.26-28.694

Citation:

K. Y. Tang and R. K. Kang, "Modeling on the Ground Wafer Shape in Wafer Rotational Grinding", Applied Mechanics and Materials, Vols. 26-28, pp. 694-697, 2010

Online since:

June 2010

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Price:

$35.00

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