Evaluating nMOSFET ESD Protection Designs: An Overview

Shen Li Chen; Guan Jhong Chen

doi:10.4028/www.scientific.net/AMM.268-270.1357

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 268-270Evaluating nMOSFET ESD Protection Designs: An...

Evaluating nMOSFET ESD Protection Designs: An Overview

Abstract:

This work is referring to the various singer-finger/ multi-finger nMOSFET structures stressed by electrostatic discharge (ESD) zapping, and to evaluate the high current distributions in different ESD protection schemes. Eventually, these efforts can be used in many integrated circuits implementations. By using the TCAD and HSpice, due to the internal parasitic resistance differences in each one finger, which will obviously result in the non-uniform turned on phenomena. Meanwhile, with different interior parasitic capacitor in each nMOSFET structure, which will be inflected the device high-current-injection behavior, i.e., ESD immunity level.

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Periodical:

Applied Mechanics and Materials (Volumes 268-270)

Pages:

1357-1360

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.268-270.1357

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Online since:

December 2012

Authors:

Shen Li Chen, Guan Jhong Chen

Keywords:

Electrostatic Discharge (ESD), GGnMOS, GRnMOS, RC Coupled, RCnMOS

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