Diluted Magnetic Zn_1-XMn_xO Semiconductor Synthesized by Hydrothermal Method

Abstract:

Diluted magnetic semiconductor Zn1-xMnxO crystals were synthesized at 430°C for 24h by hydrothermal method. 3mol·L-1KOH was used as the mineralizer, and the fill factor is 35%. The obtained crystals show a ZnO wurtzite structure, with positive polar faces{0001}, negative polar faces{000 }, p faces{ 011} and –p faces { 01 } exposed. The height of the crystal is 5-30 m and radius-height ratio is2:1. Mn atom concentration of 2. 6% (x=0.026) was determined using X-ray energy dispersive spectroscopy ( EDS). The crystals show low-temperature ferromagnetism with Curie temperature of 50K.

• Periodical: Applied Mechanics and Materials (Volumes 271-272)
• Pages: 26-30
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.271-272.26
• Online since: December 2012
• Authors: Wen Li Zheng, Wei Yang
• Keywords: Crystals, Diluted Magnetic Semiconductor, Hydrothermal Method, Zinc Oxide (ZnO)

References

[1] Dj.M. Maric, P.F. Meier and S.K. Estreicher: Mater. Sci. Forum Vol. 83-87 (1992), p.119

[1] MatsumotoY J, MurakamiM, ShonoT J, etal: Science Vol. 291(2001), pp.854-856

[2] DietlT, OhnoH, MatsukuraF, etal: Science Vol.287(2000), pp.1019-1022

[3] SharmaP, GuptaA, RaoKV, etal: Nature Materials Vol. 2(10) (2003), pp.673-677

[4] DietlT Dilute: Nature Materials Vol. 2(10)( 2003), p.646

[5] ChibaD, YamanouchiM, MatsukuraF,etal: Science Vol. 301(2003), p.943

[6] ParkYD, HanbickiAT, ErwinSC, etal: Science Vol. 295(2002), p.651

[7] OhnoH:Science Vol. 281(1998), p.951

[8] AndoK, SaitoH, ZhengW J,etal:J. Appl. Phys. Vol. 89(2001), p.7284

[9] JungSW, AnSJ, YiGC, etal:Appl. Phys. Lett. Vol.80 (2002), pp.4561-4563

[10] ChangYQ, WangDB, LuoXH, etal: Appl. Phys. Lett. Vol. 83(2003), p.4020.

[11] ChangYQ, XuXY, LuoXH, etal: Chinese Phys. Lett. Vol. 22(2005), pp.991-994.

[12] ChangYQ, LuoXH, XuXY, etal: Chinese Phys. Lett. Vol. 20(2003), pp.2058-2060.

[13] RoyVAL, DjuriiAB, LiuH, etal: Appl. Phys. Lett. Vol. 84(2004), pp.756-758.

[14] NortonDP, PeartonSJ, HebardAF, etal: Appl. Phys. Lett. Vol. 82(2003), pp.239-241.

[15] IpK,eta: J. Vac. Sci. Technol. Vol. B21(2003), p.1476.

[16] Ki JY, ParkJH, ParkBG,etal: phys. Rev. Lett. Vol. 90(2003), p.017401.

[17] ParkJH, Ki MG, JangHM, etal: Appl. Phys. Lett. Vol. 84(2004), pp.1338-1340.

[18] LeeUn-C,ChangKJ:Phys. Rev. B Vol. 69(2004), p.085205.

[19] ChambersSA, DroubayT, WangCM, etal:Appl. Phys. Lett. Vol. 82(2003),pp.1257-1259.

[20] AndoK :Appl. Phys. Lett. Vol. 82(2003), p.100.

[21] ZajacM, GoskJ, GrzankaE,etal: J. Appl. Phys. Vol. 93(2003), pp.4715-4717.

[22] KolesnikS, DabrowskiB,MaisJ: J.Appl. Phys. Vol. 95(2004), pp.2582-2586.

[23] Ki SS, MoonJHa, LeeBT, etal: J.Appl. Phys. Vol. 95(2004), pp.454-459.

[24] HanSJ, JangTH,Ki YB, etal:Appl. Phys. Lett vol. 83(2003),pp.920-922.

[25] ChengXM,ChienCL:J. Appl. Phys. Vol. 9(2003), pp.7876-7878.

[26] SakagamiN, YamashitaM, SekiguchiT,et al:Journal of Crystal Growth Vol. 229(1-4) (2001), pp.98-103.

[27] SekiguchiT,MiyashitaS, ObaraK, etal:Cryst. Growth Vol. 214-215(2000), pp.72-76.

[28] SuscavageM, etal:1998 GaN and Related Alloys Vol. 214-215(1998), pp.70-72.

[29] ErikoOM, HirakuO, IkuoNK, etal:Journal of Crystal Growth Vol. 260(2004), pp.166-170.

[30] LiuB, ZengHC, JiYL, etal:J.Am. Chem. Soc. Vol. 125(15) (2003), pp.4430-4431.

[31] JiYL, GuoL, XuH, SionP, etal:J. Am. Chem. Soc. Vol. 124(50) (2002), pp.14864-14865.

[32] ChoyJH, JangES,WonJH, etal:Appl. Phys. Lett. Vol. 84(2004), pp.287-289.

[33] WangBG, ShiEW, etal: Crystal Research and Technology Vol. 33(6) (1998), pp.937-941.

[34] QiuZR, WongKS, WuMM,etal:Appl. Phys. Lett. Vol. 84(2004), pp.2739-2741.