Improved Performance of 4H-SiC MESFET with Stepped-Channel

Hu Jun Jia; Yin Tang Yang; Lian Jin Zhang; Bao Xing Duan

doi:10.4028/www.scientific.net/AMM.271-272.21

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 271-272Improved Performance of 4H-SiC MESFET with...

Improved Performance of 4H-SiC MESFET with Stepped-Channel

Abstract:

A novel 4H-SiC MESFET with stepped-channel (stepped-spacer) structure is proposed for the first time and analyzed by 2D numerical simulation. Based on the stepped buried oxide structure of SOI which can produce additional electrical Electric field peaks, much more advantages can be obtained through a stepped-channel structure compared to that of the field terminal technology, such as an obvious increase of the breakdown voltage which is equal to the electric field to the path integral, and the lower capacitances lead to a higher cut-off frequency. The simulation results show that a 100% higher saturated drain current and a 153% larger breakdown voltage can be obtained utilizing the stepped-channel structure MESFET than those of the conventional counterpart.

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Applied Mechanics and Materials (Volumes 271-272)

Pages:

21-25

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.271-272.21

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Online since:

December 2012

Authors:

Hu Jun Jia, Yin Tang Yang, Lian Jin Zhang, Bao Xing Duan

Keywords:

4H-SiC, Electric Field Crowding, MESFET, Stepped-Channel

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