Taper Angle of Silicon Nitride Thin Film Control by Laser Direct Pattern for Transistors Fabrication

Abstract:

Silicon nitride (SiNx), an important material used as a dielectric layer and passivation layer in thin film transistor liquid crystal display (TFT LCD) was patterned by a non-lithographic process. SiNx was deposited by plasma enhanced chemical vapor deposition (PECVD) on glass substrate. Laser photoablation can effectively pattern 5 µm diameter with 200 nm depth hole in SiNx thin films with laser photoablation. The threshold remove fluence is 1350 mJ/cm² with 1 laser irradiation shot. The contact-hole taper angle as a function of the laser irradiation shot number. The taper angle increased with increasing the laser irradiation shot number. The contact-hole taper angle etched profile was successfully controlled by vary the laser irradiation shot number.

• Periodical: Applied Mechanics and Materials (Volumes 284-287)
• Pages: 225-229
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.284-287.225
• Online since: January 2013
• Authors: Chao Nan Chen, Jung Jie Huang, Gwo Mei Wu, How Wen Chien
• Keywords: Laser Direct Patterning, Silicon Nitride (SiNx), Taper Angle, Thin-Film Transistor (TFT)

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