Design of High-Efficiency Voltage-Mode Class-D RF Power Amplifier for Class-S Transmitter Using Signal Analysis and Additional Multi-Section Bandpass Filter

Article Preview

Abstract:

This paper proposes a high-efficiency voltage-mode class-D (VMCD) RF power amplifier (PA) for class-S transmitter, which includes additional multi-section bandpass filter (BPF). For an accurate analysis of class-S transmitter, the output signals of band pass delta sigma modulator (BPDSM) are described with probability distribution functions (PDF) versus pulse widths of quantized signals. Usually, the results show that magnitudes of sub-harmonic terms increases for high peak-to-average power ratio signal such as long term evolution (LTE) signal. For a high efficiency and appropriate linearity of class-S transmitter, we propose a VMCD PA utilizing a multi-section BPF. The proposed architecture effectively improves the linearity without deterioration the efficiency. For the LTE signal, the efficiency is 25.82% and adjacent channel power ratio (ACPR) is -52.44dBc when using a one-section BPF. By using the multi-section BPF, ACPR and efficiency have been improved up to 11.88dB and 13.44% respectively. The effectiveness of the proposed design is demonstrated for various input signals.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

2509-2515

Citation:

Online since:

January 2013

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] A. Wentzel, C. Meliani and W. Heinrich, RF Class-S Power Amplifiers: State-of-the-Art Results and Potential, IEEE MTT-S Int. Microwave Symp. Dig., pp.812-815. (2010).

DOI: 10.1109/mwsym.2010.5517408

Google Scholar

[2] R. Leberer, R. Reber and M. Oppermann, An AlGaN/GaN Class-S Amplifier for RF-Communication Signals, IEEE MTT-S Int. Microwave Symp. Dig., pp.85-88. (2008).

DOI: 10.1109/mwsym.2008.4633109

Google Scholar

[3] A. Samulak, G. Fischer and R. Weigel, Optimized Delta Sigma Modulation for Class-S Power Amplifiers based on GaN switching transistors, IEEE Radio and Wireless Symp. 2009., pp.546-549. (2009).

DOI: 10.1109/rws.2009.4957409

Google Scholar

[4] T. P. Hung, J. Rode, L. E. Larson and P. M. Asbeck, Design of H-Bridge Class-D Power Amplifiers for Digital Pulse Modulation Transmitters, IEEE Trans. Microwave Theory & Tech., vol. 55, no. 12, pp.2845-2855. (2007).

DOI: 10.1109/tmtt.2007.909881

Google Scholar

[5] A. Grebennikov, and N. O. Sokal, Switchmode RF power Amplifiers, Newnes, (2007).

DOI: 10.1016/b978-075067962-6/50033-2

Google Scholar

[6] G. Dambrine, A. Cappy, F. Heliodore and E. Playez, A New Method for Determining the FET Small-Signal Equivalent Circuit, IEEE Trans. Microwave Theory & Tech., vol. 36, no. 7, pp.1151-1159. (1988).

DOI: 10.1109/22.3650

Google Scholar

[7] T. Johnson and S. P. Stapleton, RF Class-D Amplification With Bandpass Sigma-Delta Modulator Drive Signals, IEEE Trans. Circuit and system, vol. 53, no. 12, pp.2507-2520. (2006).

DOI: 10.1109/tcsi.2006.885980

Google Scholar