The Effect of Annealing Temperature on the Opt-Electric Properties of Ti:GZO Transparent Conducting OxidesThin Film

Abstract:

This study utilizes radio frequency magnetron sputtering(RF-sputtering) to deposit GZO transparent conductive film and Ti thin film on the same corning glass substrate, then treats GZO/Ti thin film with rapid thermal annealing. The annealing temperature is 300, 500 and 550°C, respectively. Moreover, the effects of process parameters on resistivity and optical properties are investigated. The deposited rate, microstructure, thickness and Optical transmission of Ti:GZO thin film are performed. For example, the thicknesses of films were determined by -step profilometer. The crystalline characteristics of thin films were investigated by X-ray diffraction (XRD). Ga and Ti concentration in ZnO film were determined by energy dispersive X-ray spectroscopy (EDS). The electrical properties of the Ti:GZO thin films were measured by Four point probe. The optical properties of Ti:GZO thin films were examined using UV–vis spectrophotometer. The results show that the transmittance of Ti:GZO thin film exhibited an excellent transparency in the visible light field. The resistivity of Ti:GZO decrease with increasing annealing temperature.

• Periodical: Applied Mechanics and Materials (Volumes 284-287)
• Pages: 324-328
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.284-287.324
• Online since: January 2013
• Authors: Tao Hsing Chen, Tzu Yu Liao
• Keywords: GZO Transparent Conductive Oxide Thin Film, RTA, Ti Co-Doped

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