Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

Shi Yuan Zhou; Kai Zhang; Dinguo Xiao; Chun Guang Xu; Bo Yang

doi:10.4028/www.scientific.net/AMM.290.115

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vol. 290Application of Silicon Carbide Diode in Ultrasound...

Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

Abstract:

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

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Periodical:

Applied Mechanics and Materials (Volume 290)

Pages:

115-119

DOI:

https://doi.org/10.4028/www.scientific.net/AMM.290.115

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Online since:

February 2013

Authors:

Shi Yuan Zhou, Kai Zhang, Dinguo Xiao, Chun Guang Xu, Bo Yang

Keywords:

High Voltage Pulse, Protection Circuit, Silicon Carbide Diode, Ultrasound (US)

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References

[1] N. C. Chaggares, R. K. Tang, and A. N. Sinclair: Protection circuitry and time resolution in high frequency ultrasonic NDE, inProc. IEEE Ultrason. Symp., 1999, p.819–822.

DOI: 10.1109/ultsym.1999.849522

Google Scholar

[2] R. Oppelt and M. Vester, Duplexer including a variable capacitance diode for an ultrasound imaging system, U.S. Patent 5609154, Mar. 11, (1997).

Google Scholar

[3] Camacho J., Fritsch C: Protection Circuits for Ultrasound Applications. IEEE Trans. on UFFC. 55(5), 2008; 1160-1164.

Google Scholar

[4] J. Fan, J. Talman, A. Fleischman, and S. L. Garverick: Integrated ampliﬁer with active limiter for intravascular ultrasonic imaging, in Proc. IASTED Int. Conf. Circuits, Signals, and Systems, Clearwater Beach, FL, 2004, p.433–438.

Google Scholar