Microstructure and Electrical Characterization of In-Doped Cd_0.9Mn_0.1Te Crystal Grown by the Vertical Bridgman Method

Abstract:

CdMnTe is one of the key materials for room temperature X-ray and gamma-ray detectors on Environmental Analysis and Monitoring. In this paper, the homogeneous Cd1-xMnxTe (x = 0.1) single crystal ingot was grown by the vertical Bridgman method. The compositional analysis was carried out by SEM/EDS. The Te inclusions were revealed by the IR transmission spectra. In dopant distribution was determined by ICP-AES measurement. The resistivity of CdMnTe was cha-racterized by I-V method. It was found that the segregation coefficient of Mn was 0.97. In dopant contents within 3 to 21 ppm of the ingot were found. The Te inclusions were mainly 8.2-28.3m in size and 1×105-1.5×107cm-3in concentration. I–V measurement reveals that sputtered Au film can form good ohmic contact and all the slices have the resistivity within 107 to 109Ωcm.

• Periodical: Applied Mechanics and Materials (Volumes 295-298)
• Pages: 322-325
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.295-298.322
• Online since: February 2013
• Authors: Zhen Wen Yuan, Lin Jun Wang, Ji Jun Zhang, Gao Li Wei, Kai Feng Qin, Jia Hua Min, Xiao Yan Liang, Yi Ben Xia
• Keywords: CdMnTe, Environmental Analysis and Monitoring, In-Doped, Te-Rich

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