Effect of Argon Pressure on the Structure and Resistivity of Dc Magnetron Sputtered LaB₆ Films

Abstract:

A series of Si (100) based LaB₆ films were deposited by D.C. magnetron sputtering with different argon pressure, one of the most important deposition parameters, which affect both the structure and properties of the thin films. XRD, AFM, Raman, and Hall measuring instrument were used to characterize the film structure and performances. It was found that argon pressure strongly influenced the condensing particles’ kinetic energy obviously through affecting the scattering processes of sputtered energetic particles, which played a crucial role in the growth of the LaB₆ films. LaB₆ film deposited at 1.0 Pa showed a higher crystallinity degree. Morever, the film displayed a more uniform structure and better electrical property, the relationship between microsture, electrical property and crystallinity were demonstrted as well.

• Periodical: Applied Mechanics and Materials (Volumes 303-306)
• Pages: 2519-2523
• DOI: https://doi.org/10.4028/www.scientific.net/AMM.303-306.2519
• Online since: February 2013
• Authors: Li Jie Hu, Lin Zhang, Guo Qing Zhao, Jie Lin, Guang Hui Min
• Keywords: Argon Pressure, LaB₆ Films, Microstructure, Resistivity

References

[1] T. Kajiwara, T. Urakabe, K. Sano, K. Fukuyama, K. Watanabe, S. Baba, T. Nakano and A. Kinbara: Vacuum Vol. 41 (1990), p.1224.

DOI: 10.1016/0042-207x(90)93917-8

[2] S.K. Shreyas, T.S. James: J. Phys. Chem. Solids. Vol. 59 (1998), p.1343.

[3] V. Craciun, D. Craciun: Appl. Surf. Sci Vol. 247 (2005), p.384.

[4] A.S. Kuzanyan, S.R. Harutyunyan, V.O. Vardanyan, G.R. Badalyan, V.A. Petrosyan and V.S. Kuzanyan: J Solid. State. Chem Vol. 179 (2006), p.2862.

DOI: 10.1016/j.jssc.2006.01.040

[5] J. Xu, G.H. Min, X.H. Zhao and H.S. Yu: Adv. Mater. Res Vol. 79-82 (2009), p.915.

[6] Y. Yuan, L. Zhang, L. Liang, K. He, R. Liu and G. Min: Ceram. Int Vol. 37 (2011), p.2891.

[7] C. Mitterer, W. Waldhauser, U. Beck and G. Reiners: Surf. Coat. Technol Vol. 86/87 (1996), p.715.

[8] F.X. Cheng and C.H. Jiang: Mater. Des Vol. 26 (2005), p.369.

[9] T. Nakano, S. Baba, A. Kobayashi, A. Kinbara, T. Kajiwara and K. Watanabe: J. Vac. Sci. Technol Vol. 3 (1991), p.547.

[10] Y. Sakuraba, H. Kato, F. Sato, T. Miyazaki, N. Kimura and H. Aoki: J. Magn. Magn. Mater Vol. 272-276 (2004), p.1145.

[11] S.T. Li, X.L. Qiao and J.G. Chen. Chin: J. Nonferrous. Met Vol. 15 (2005), p.1214 (In Chinese).

[12] N. Ogitaa, S. Nagai, N. Okamoto, F. Iga, S. Kunii, J. Akimitsu and M. Udagawa: Physica B Vol. 328 (2003), p.131.

DOI: 10.1016/s0921-4526(02)01827-6

[13] A. Kinbara, T. Nakano, A. Kobayashi, S. Baba, and T. Kajiwara: Appl. Surf. Sci Vol. 70-71(1993), p.742.

[14] J.L. Huang, Y. Pan, J.Y. Chang, and B.S. Yao: Surf. Coat. Technol Vol. 184 (2004), p.188.

[15] Y. Hu and X.G. Diao: Vacuum Vol. 75 (2004), p.183.